4.4 Article

The Annealing Impact on Properties of CN-85 Polymer NTD

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APPLIED RADIATION AND ISOTOPES
卷 178, 期 -, 页码 -

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.apradiso.2021.109933

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CN-85; Annealing; Optical band gap; Alpha particles; UV-VIS spectroscopy; SSNTDs

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The optical and structural properties of cellulose nitrate polymer (CN-85) were studied after annealing and irradiation, revealing changes in band gap energy and Urbach's energy values. UV-VIS analysis showed a shift in absorption edge towards longer wavelengths. This technique holds potential benefits for a wide range of applications including optoelectronics and microelectronic devices.
Samples of cellulose nitrate polymer (CN-85) were annealed at 100 degrees C, 120 degrees C, and 140 degrees C for 15 min before and after irradiation with alpha particles emitted from a(241)Am source. Irradiation was performed at room temperature for 5 min. The changes in the optical and structural properties of CN-85 NTD, due to annealing and irradiation, were studied by using ultraviolet-visible spectroscopy (UV-VIS), and Fourier transform infrared spectroscopy (FTIR). Direct and indirect energy gap values, the number of carbon atoms, carbon clusters, and Urbach's energy values were determined. The UV-VIS analysis showed a shift in the absorption edge of the CN-85 polymer toward long wavelengths. The FTIR results revealed the changes in some bonds and the structural decomposition of CN-85 due to irradiation. The direct band gap energy was slightly decreased from 4.13 eV to 4.09 eV when the pristine samples were heated to 140 degrees C and irradiated. The indirect band gap energy was decreased from 3.9 eV to 3.8 eV under the same conditions. The Urbach's energy values showed a fluctuating rise with increasing annealing temperature for the irradiated and heated samples. When the pristine samples irradiated and heated, the band gap energy is reduced from 4.13 eV to 4.06 eV and from 3.90 eV to 3.84 eV for the direct and indirect transition, respectively. In conclusion, this technique showed promising benefits for a wide range of applications such as optoelectronics and microelectronic devices.

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