Demonstration of ultra-small 5 x 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%

Red micro-size light-emitting diodes (mu LEDs) less than 10 x 10 mu m(2) are crucial for augmented reality (AR) and virtual reality (VR) applications. However, they remain very challenging since the common AlInGaP red mu LEDs with such small size suffer from a dramatic reduction in the external quantum efficiency. In this work, we demonstrate ultra-small 5 x 5 mu m(2) 607 nm amber mu LEDs using InGaN materials, which show an EQE over 2% and an ultra-low reverse current of 10(-9) A at -5 V. This demonstration suggests promising results of ultra-small InGaN mu LEDs for AR and VR displays.

Automated summary

In this work, ultra-small 5 x 5 mu m(2) amber mu LEDs with high EQE and low reverse current were demonstrated using InGaN materials, indicating their promising potential for AR and VR displays.