Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

In order to improve the thermal resistance and stability of indium gallium zinc oxide material, different oxygen vacancy passivation treatments have been carried out for comparison in this work. Through the analysis of x-ray photoelectron spectroscopy and reliable characterization at various temperatures, the internal mechanisms and physical model are well discussed. Notably, compared with other oxidation processes, the supercritical phase fluid-treated sample exhibits excellent electrical performance, high uniformity, and outstanding thermal stability by passivating more deep-located oxygen vacancy and introducing more well-bounded oxygen atom. Considering with the high-density device integration and critical heat dissipation issue, this research may provide an important reference for realizing monolithic 3D integration.

Automated summary

Various oxygen vacancy passivation treatments were conducted to enhance the thermal resistance and stability of indium gallium zinc oxide material in this study. Analysis of X-ray photoelectron spectroscopy revealed that the supercritical phase fluid-treated sample showed excellent electrical performance, high uniformity, and outstanding thermal stability, making it a promising option for monolithic 3D integration.