High efficiency InGaN nanowire tunnel junction green micro-LEDs

We report on the study of InGaN nanowire green light emitting diodes (LEDs) with lateral dimensions varying from similar to 1 to 10 mu m. For a device with an areal size similar to 3 x 3 mu m(2), a maximum external quantum efficiency similar to 5.5% was directly measured on wafer without any packaging. The efficiency peaks at similar to 3.4 A/cm(2) and exhibits & SIM;30% drop at an injection current density & SIM;28 A/cm(2). Detailed analysis further suggests that a maximum external quantum efficiency in the range of 30%-90% can potentially be achieved for InGaN nanowire micro-LEDs by optimizing the light extraction efficiency, reducing point defect formation, and controlling electron overflow. This study offers a viable path for achieving ultrahigh efficiency micro-LEDs operating in the visible.

Automated summary

This study focuses on InGaN nanowire green light emitting diodes (LEDs) with lateral dimensions varying from about 1 to 10 micrometers. The research shows that a maximum external quantum efficiency of around 5.5% can be achieved for devices with an areal size of about 3 x 3 micrometers without any packaging. By optimizing light extraction efficiency, reducing point defect formation, and controlling electron overflow, the external quantum efficiency of InGaN nanowire micro-LEDs has the potential to reach 30%-90%.