期刊
APPLIED PHYSICS LETTERS
卷 120, 期 5, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0074419
关键词
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资金
- Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]
- Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program [KAW-2020.0196]
- Swedish Research Council (VR) [2016-03365, 2021-03826, 2018-05973]
- National Key Research and Development Program of China [2018YFB0703600]
- National Natural Science Foundation of China [51872133]
- Guangdong Innovative and Entrepreneurial Research Team Program [2016ZT06G587]
- Tencent Foundation through XPLORER PRIZE [2021B1212040001]
- Swedish Research Council [2021-03826] Funding Source: Swedish Research Council
In this study, Mg3Bi2 films with good thermoelectric properties were successfully synthesized at low temperatures, and the epitaxial growth relationship between Mg3Bi2 and the substrate was observed.
Mg3Sb2-based thermoelectric materials attract attention for applications near room temperature. Here, Mg-Bi films were synthesized using magnetron sputtering at deposition temperatures from room temperature to 400 & DEG;C. Single-phase Mg3Bi2 thin films were grown on c-plane-oriented sapphire and Si(100) substrates at a low deposition temperature of 200 & DEG;C. The Mg3Bi2 films grew epitaxially on c-sapphire and fiber-textured on Si(100). The orientation relationships for the Mg3Bi2 film with respect to the c-sapphire substrate are (0001) Mg3Bi2||(0001) Al2O3 and [11 2 over bar 0] Mg3Bi2||[11 2 over bar 0] Al2O3. The observed epitaxy is consistent with the relatively high work of separation, calculated by the density functional theory, of 6.92 J m(-2) for the Mg3Bi2 (0001)/Al2O3 (0001) interface. Mg3Bi2 films exhibited an in-plane electrical resistivity of 34 mu omega m and a Seebeck coefficient of +82.5 mu V K-1, yielding a thermoelectric power factor of 200 mu W m(-1) K-2 near room temperature.
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