相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Transformation of the elemental composition on the GaN surface during a 2D-3D transition
Y. E. Maidebura et al.
APPLIED SURFACE SCIENCE (2022)
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Sebastian Tamariz et al.
ACS PHOTONICS (2020)
Density control of GaN quantum dots on AlN single crystal
Sebastian Tamariz et al.
APPLIED PHYSICS LETTERS (2019)
New approaches for calculating absolute surface energies of wurtzite (0001)/(000(1)over-bar): A study of ZnO and GaN
Jingzhao Zhang et al.
JOURNAL OF APPLIED PHYSICS (2016)
Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source
B. Damilano et al.
JOURNAL OF APPLIED PHYSICS (2015)
Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot
Mark J. Holmes et al.
NANO LETTERS (2014)
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
Jai Verma et al.
APPLIED PHYSICS LETTERS (2013)
Metallicity of InN and GaN surfaces exposed to NH3
Weronika Walkosz et al.
PHYSICAL REVIEW B (2012)
Review: GaN growth by ammonia based methods - density functional theory study
S. Krukowski et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2009)
Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces
L. C. Grabow et al.
SURFACE SCIENCE (2009)
Computational study of adsorption, diffusion, and dissociation of precursor species on the GaN (0001) surface during GaN MOCVD
Yong Sun Won et al.
SURFACE SCIENCE (2009)
Excitation-dependent photoluminescence in Ge/Si Stranski-Krastanov nanostructures
B. V. Kamenev et al.
APPLIED PHYSICS LETTERS (2006)
Growth and characterization of single quantum dots emitting at 1300 nm
B Alloing et al.
APPLIED PHYSICS LETTERS (2005)
Formation of self-assembled quantum dots induced by the Stranski-Krastanow transition: a comparison of various semiconductor systems
H Mariette
COMPTES RENDUS PHYSIQUE (2005)
Structure of GaN quantum dots grown under modified Stranski-Krastanow conditions on AlN
N Gogneau et al.
JOURNAL OF APPLIED PHYSICS (2003)
A UV light-emitting diode incorporating GaN quantum dots
S Tanaka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2003)
GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN
C Adelmann et al.
APPLIED PHYSICS LETTERS (2002)
First-principles surface phase diagram for hydrogen on GaN surfaces
CG Van de Walle et al.
PHYSICAL REVIEW LETTERS (2002)
GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors
K Kawasaki et al.
APPLIED PHYSICS LETTERS (2001)
Group-III nitride quantum heterostructures grown by molecular beam epitaxy
N Grandjean et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2001)
分享论文
