4.6 Article

The influence of in situ ozone on structure and transport properties for perovskite stannate La-doped BaSnO3 epitaxial films

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Nanoscience & Nanotechnology

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Ruyi Zhang et al.

Summary: High-mobility epitaxial La-doped BaSnO3 films were successfully synthesized on SrTiO3 single crystal substrates using high-pressure magnetron sputtering, achieving a room-temperature electron mobility value that is among the highest reported values. The high argon pressure during sputtering is crucial in stabilizing the fully relaxed films and inducing oxygen vacancies, leading to high mobility at room temperature. This work provides an easy and economical method for mass producing high-mobility transparent conducting films for transparent electronics.

APL MATERIALS (2021)

Article Physics, Applied

Tunable permittivity of La-doped BaSnO3 thin films for near- and mid-infrared plasmonics

Heungsoo Kim et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

Review Nanoscience & Nanotechnology

Perovskite oxides as transparent semiconductors: a review

Haiying He et al.

NANO CONVERGENCE (2020)

Article Materials Science, Multidisciplinary

Effect of oxygen pressure on the structural and optical properties of BaSnO3 films prepared by pulsed laser deposition method

Jibi John et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2019)

Article Nanoscience & Nanotechnology

Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films

Hai Jun Cho et al.

APL MATERIALS (2019)

Article Nanoscience & Nanotechnology

Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon

Zhe Wang et al.

APL MATERIALS (2019)

Article Materials Science, Multidisciplinary

Buffer layer-less fabrication of a high-mobility transparent oxide semiconductor, La-doped BaSnO3

Anup Sanchela et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Article Materials Science, Multidisciplinary

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

Daseob Yoon et al.

NPG ASIA MATERIALS (2018)

Article Engineering, Electrical & Electronic

Investigation of High-Performance ITO-Stabilized ZnO TFTs With Hybrid-Phase Microstructural Channels

Sunbin Deng et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)

Article Nanoscience & Nanotechnology

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Hanjong Paik et al.

APL MATERIALS (2017)

Article Physics, Applied

Enhanced electron mobility in epitaxial (Ba, La)SnO3 films on BaSnO3(001) substrates

Woong-Jhae Lee et al.

APPLIED PHYSICS LETTERS (2016)

Article Physics, Applied

Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

Scott A. Chambers et al.

APPLIED PHYSICS LETTERS (2016)

Article Chemistry, Physical

High electrical conductivity in oxygen deficient BaSnO3 films

Qinzhuang Liu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

Article Physics, Condensed Matter

First principles calculations of SrZrO3 bulk and ZrO2-terminated (001) surface F centers

R. I. Eglitis et al.

COMPUTATIONAL CONDENSED MATTER (2016)

Article Nanoscience & Nanotechnology

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

Santosh Raghavan et al.

APL MATERIALS (2016)

Article Materials Science, Ceramics

Structural, electrical and optical properties of lanthanum-doped barium stannate

B. C. Luo et al.

CERAMICS INTERNATIONAL (2015)

Article Nanoscience & Nanotechnology

Alkaline earth stannates: The next silicon?

Sohrab Ismail-Beigi et al.

APL MATERIALS (2015)

Article Nanoscience & Nanotechnology

Structure and transport in high pressure oxygen sputter-deposited BaSnO3-δ

Koustav Ganguly et al.

APL MATERIALS (2015)

Article Physics, Applied

Improved electrical mobility in highly epitaxial La:BaSnO3 films on SmScO3(110) substrates

P. V. Wadekar et al.

APPLIED PHYSICS LETTERS (2014)

Article Multidisciplinary Sciences

Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response

Chongyin Yang et al.

SCIENTIFIC REPORTS (2013)