Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Color centers in silicon carbide (4H-SiC) are potentially usable as spin defects for quantum sensing and quantum information technology. In particular, neutral divacancies (the P6/P7centers, VSiVC0) and a certain type of silicon vacancies (the T-V2a center, V-Si(-) at the k site) are promising for addressing and manipulating single spins. Although the T-V2a spin is readable at room temperature, the readout techniques have been limited to luminescence-based ones (e.g., optically detected magnetic resonance). In this study, we demonstrated electrical detection of T-V2a-type silicon vacancies at room temperature by using electrically detected magnetic resonance on 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). T-V2a spin defects were embedded in the channel region of well-defined 4H-SiC MOSFETs via controlled proton irradiation. The number of detected T-V2a spins was estimated to be & SIM;10(5). We also found that the charge state of the T-V2a spin defect can be controlled by varying the gate voltage applied to the MOSFET.

Automated summary

In this study, electrical detection of T-V2a-type silicon vacancies in silicon carbide was demonstrated, and it was found that the charge state of the vacancies can be controlled by varying the gate voltage.