Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (similar to 50J/cm(2)) demonstrates good electrical properties with a mobility of 0.34cm(2)/Vs and an on-off ratio of 10(6) and a substrate temperature under 210 degrees C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol-gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol-gel reactions in films. Published under an exclusive license by AIP Publishing.

Automated summary

The use of a resonant absorber allows for low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light, resulting in good electrical properties in devices. Further analysis shows that the pulse light irradiation facilitated sol-gel reactions in the films.