Novel fabrication process of charge transfer complex thin films for large area by thermal diffusion and their n-channel organic transistor operation

We have proposed a new fabrication process of donor and acceptor charge transfer complex thin films using thermal diffusion. 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F-4-TCNQ) was vacuum-deposited on 2,7-didecylbenzothienobenzothiophene (C-10-BTBT) thin films fabricated by spin-coating, and F-4-TCNQ molecules were diffused into C-10-BTBT thin films by thermally annealing. The X-ray diffraction pattern and field effect transistor of thermally annealed thin films indicated the crystal structure of the charge transfer complex of C-10-BTBT and F-4-TCNQ and n-channel operation in air, respectively. We conclude that it is good process to use the thermal diffusion for the fabrication of the large area thin films of charge transfer complex.

Automated summary

A new fabrication process of donor and acceptor charge transfer complex thin films using thermal diffusion was proposed in this study. The results showed that the thermally annealed thin films formed charge transfer complexes of C-10-BTBT and F-4-TCNQ, which exhibited n-channel operation in air. Therefore, thermal diffusion is an effective technique for the fabrication of large area charge transfer complex thin films.