4.5 Article

Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact

期刊

APPLIED PHYSICS EXPRESS
卷 15, 期 2, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac4c35

关键词

quantum point contact; fractional quantum Hall effect; even-denominator 3; 2 state

资金

  1. JSPS [KAKENHI 15H0587, 15K217270, 18H01811, KAKENHI 26390006, 17H02728]
  2. Tohoku University's GP-Spin program
  3. Grants-in-Aid for Scientific Research [17H02728, 18H01811] Funding Source: KAKEN

向作者/读者索取更多资源

The 3/2 diagonal resistance discovered in a nanometer-sized triple-gated quantum point contact on a high-mobility single-layer two-dimensional GaAs wafer highlights the potential of even-denominator states in future quantum technologies. The crucial role of the center gate in realizing the QPC's 3/2 state and the use of conventional QPC devices as building blocks for semiconductor quantum devices signify a new path for the development of semiconductor-based quantum technologies.
The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC's 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.

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