Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

We performed an isothermal annealing study on Mg-implanted GaN at 1300 degrees C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 degrees C for 5 min. We also performed annealing at 1300 degrees C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand the inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.

Automated summary

Isothermal annealing of Mg-implanted GaN at 1300 degrees C in an ultra-high-pressure (1 GPa) nitrogen ambient resulted in high acceptor activation ratio and low compensation ratio. Annealing at reduced nitrogen pressure of 300 MPa also achieved high electrical activation similar to that obtained at 1 GPa.