期刊
APPLIED PHYSICS EXPRESS
卷 14, 期 12, 页码 -出版社
IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac345d
关键词
Clustering; Correlated Defect Generation; Dielectric Breakdown; Heavy Ion Irradiation; Percolation; TDDB; Weibull Slope
资金
- MINCyT [PICT 2016/0579, PICTE 2018/0192, PME 2015/0196]
- CONICET [PIP-11220130100077CO]
- UTN [PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, CCUTNBA6615, CCUTNBA5182, MATUNBA4936]
- A*STAR BRENAIC Project [A18A5b0056]
- EDB-IPP Project [IGIPAMD2001]
By using radiation fluence to adjust defect density and conducting statistical studies on soft, progressive, and hard breakdown, the BD sequence in high-K/interfacial layer stacks for time-dependent dielectric breakdown can be accurately inferred.
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2-SiO (x) bilayered MOS structure.
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