Molecular beam epitaxial growth of GaAs/GaNAsBi core-multishell nanowires

GaAs/GaNAsBi/GaAs core-multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately 1.5% N and 2.6% Bi and has a compressive lattice mismatch of less than 0.2% with GaAs layers. The strain mediation by the introduction of both N and Bi suppresses the crystalline deformation, resulting in the clear formation of the GaNAsBi shell. Thus, we obtained room-temperature photoluminescence with the maximum position at approximately 1300 nm from the GaAs/GaNAsBi/GaAs core-multishell nanowires.

Automated summary

GaAs/GaNAsBi/GaAs core-multishell nanowires were successfully grown on Si(111) substrates, with a GaNAsBi shell containing N and Bi and having a compressive lattice mismatch of less than 0.2%, resulting in room-temperature photoluminescence at around 1300 nm.