期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 128, 期 1, 页码 -出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-021-05167-4
关键词
Porous silicon; CuO; Cu2O; Heterostructure; CO2; Gas sensing
资金
- National Research Fund (DGRSDT/MESRS)
A n(+)-PSi/p-CuO/n-Cu2O bilayered heterostructure has been fabricated and tested for its performance in a CO2 gas environment. The results showed that the bilayer structure has high sensitivity and fast response time at low bias potential.
In this work, n(+)-PSi/p-CuO/n-Cu2O bilayered heterostructure has been fabricated and tested against CO2 gas. p-type cupric oxide CuO was fabricated by a two-step thermal evaporation/oxidation process of copper (Cu) thin films. Subsequently, the n-type cuprous oxide Cu2O was deposited by electrochemical method on the top of the CuO/porous silicon (PSi) structure in an aqueous acetate bath [copper acetate (C4H6CuO4) and sodium acetate (C2H3NaO2)]. The current-voltage (I-V) and response time (I-t) characteristics of the heterostructure device to CO2 gas environment were studied. We have demonstrated that the bilayered PSi/CuO/Cu2O structure is sensitive to CO2 gas with a high sensitivity of the order of 80% at low bias potential (0.85 V) and fast response time of the order of 1 s at room temperature. Finally, a CO2 gas sensing mechanism has been proposed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据