Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates

Several thermal parameters were analyzed for nanocrystalline silicon carbide (3C-SiC) particles at the performed depending on the thermal processing rate. The hydroxyl groups on the surface of nanocrystalline 3C-SiC particles have been investigated as a function of temperature and heating rate. Specific heat capacity and Gibbs energy of silicon carbide nanoparticles have been determined in the temperature range of 300-1270 K at various heating rates. The enthalpy and the entropy were calculated at different thermal processing rates (theoretical calculations are confirmed based on experimental results). Experimental results obtained for all thermophysical parameters were comparatively studied at different thermal processing rates.

Automated summary

This study analyzed the thermal parameters of nanocrystalline silicon carbide (3C-SiC) particles at different thermal processing rates. The study investigated the hydroxyl groups on the surface of the particles and determined the specific heat capacity, Gibbs energy, enthalpy, and entropy of the silicon carbide nanoparticles. The experimental results were compared at different thermal processing rates.