4.8 Article

Building of sub-monolayer MoS2-x structure to circumvent the scaling relations in N2-to-NH3 electrocatalysis

期刊

APPLIED CATALYSIS B-ENVIRONMENTAL
卷 298, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apcatb.2021.120615

关键词

Molybdenum disulphide; Sub-monolayer; Electrocatalysis; Nitrogen reduction reaction; Scaling relation

资金

  1. National Natural Science Foundation of China [U2004208, 21773216, 51173170, 21703207]
  2. Science and Technology Program from Henan province [182102410073]
  3. China Postdoctoral Science Foundation [2018T110738]
  4. Australian Research Council [CE140100012, DP170102267]

向作者/读者索取更多资源

Efficient electroreduction of N-2 into NH3 remains challenging due to scaling relations and competing HER. However, a sub-monolayer MoS2-x structure can dissociate and dynamically hydrogenize N-2, stabilize nitrogen intermediates selectively, and bypass inherent scaling relations, achieving outstanding electrocatalytic performance at ultra-low overpotential.
Finding catalysts and mechanisms for efficient electroreduction of N-2 into NH3 remains of great challenge, due to the limitation of the scaling relations and competing HER. Here we report that N-2 can be dissociated and dynamically hydrogenized on a peculiar sub-monolayer MoS2-x structure. Different with conventional surface-binding paradigms of the reaction intermediates, such a dynamic surface-binding paradigm can selectively stabilize the nitrogen intermediates and enable the circumvention of the inherent scaling relations in electrocatalysis of N-2 to NH3. Atomic resolution AC-STEM and DFT calculations confirm the atomic arrangement and a similar to 3% compressive strain in the large area of in-plane S-vacancies of sub-monolayer MoS2-x structure. Further experimental and theoretical results demonstrate that the as-designed surface tune their catalytic properties through adjusting their surface-binding to nitrogen intermediates with tunable nitrogen affinity, leading to outstanding electrocatalytic NRR performance at ultra-low overpotential (similar to 0.2 V. vs. RHE).

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