期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 52, 期 12, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2016.2623271
关键词
Infrared detectors; quantum wells; semiconductor devices; semiconductor superlattices
资金
- INCT/MCT-DISSE
- CNPq
- FAPERJ
- CAPES Foundation
- FAPESP
In this paper, we show a superlattice quantum well infrared photodetector (S-QWIP) grown by metal-organic vapor phase epitaxy with two narrow photocurrent peaks in the mid infrared range due to transitions between the ground state from a quantum well and two excited states localized in the continuum. The structure composed of InGaAs/InAlAs quantum-well lattice matched to InP with a central quantum well acting as an artificial defect. The potential profile is carefully chosen to explore the parity anomaly of the continuum localized states and also to reduce the thermoexcited electrons decreasing the dark current. The photocurrent spectrum shows two peaks with transition energies of 300 and 460 meV (Delta lambda/lambda of 0.13 and 0.12) at 12 K. The peak detectivity is 1.23x10(10) Jones at 30 K and +5 V. When compared with a regular multiquantum well sample designed to generate photocurrent at the same wavelength, the S-QWIP shows an increase of 15 K on its background-limited performance temperature and a lower dark current for temperatures above 200 K.
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