期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 2, 页码 212-215出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2512279
关键词
Ga2O3; MOSFET; power device; field plate; breakdown; dispersion; current collapse; high temperature
资金
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Next-generation power electronics (funding agency: NEDO)
Depletion-mode field-plated Ga2O3 metal-oxide-semiconductor field-effect transistors were demonstrated for the first time. Substantial enhancement in breakdown voltage was achieved with a gate-connected field plate. The device channels, formed by selective-area Si ion implantation doping of an undoped Ga2O3 epilayer, were electrically isolated by the highly resistive epilayer without mesa etching. Effective surface passivation and high Ga2O3 material quality contributed to the absence of drain current collapse. The transistors exhibited an off-state breakdown voltage of 755 V, a high drain current on/off ratio of over 10(9), and stable high temperature operation against 300 degrees C thermal stress.
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