期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 3, 页码 245-248出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2523681
关键词
Negative capacitance; ferroelectrics; steep switching; MOSFET; CMOS
资金
- National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning through the Korean Government [2014R1A2A1A11050637]
- National Research Foundation of Korea [2014R1A2A1A11050637, 22A20152213124] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate a nearly hysteresis-free sub-60-mV/decade subthreshold swing (SS) operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally connected to a ferroelectric capacitor. The SS <60 mV/decade is observed over three orders of magnitude (i.e., 10 pA/mu m similar to 10 nA/mu m of drain current) and at large drain current levels. However, the extent of hysteresis is found to be dstrongly dependent on the drain voltage. At high drain voltages, large hysteresis occurs, indicating the influence of drain voltage in the charge balance with the ferroelectric capacitor.
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