期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 7, 页码 924-927出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2574916
关键词
Magnetic skyrmion; domain wall; racetrack memory; voltage manipulation
资金
- China Postdoctoral Science Foundation [2015M570024]
- National Natural Science Foundation of China [61501013, 61571023]
Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.
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