期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 6, 页码 751-753出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2556858
关键词
Gallium arsenide (GaAs); high gain; photoconductive semiconductor switch; avalanche; multiplication
资金
- National Basic Research Program of China [2014CB339802]
- National Natural Science Foundational of China [61427814, 51377133, 51477140]
- Ultrafast Photo-Electronic Technology Innovation Group of Shaanxi Province [2014KCT-13]
- China Post-Doctoral Science Foundation [2015T81044]
- Terahertz Science and Technology Fund within the Chinese Academy of Engineering Physics [CAEPTHZ201404]
In this letter, we show that the high gain (HG) operation of gallium arsenide photoconductive semiconductor switches can be achieved with an excitation energy as low as 24.3 nano-joules. The bias electric field is 78 kV/cm, and the corresponding current is 32.5 A. The concept of a multiplication rate is proposed to understand the avalanche and multiplication level in the HG operation.
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