期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 2, 页码 146-149出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2508064
关键词
Silicon carbide; bandgap reference; BJT; high temperature integrated circuit; voltage reference
资金
- Swedish Foundation for Strategic Research through HOTSiC Program
Three fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H-SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 degrees C to 500 degrees C. The three BGVRs are functional and exhibit 46 ppm/degrees C, 131 ppm/degrees C, and 120 ppm/degrees C output voltage variations from 25 degrees C up to 500 degrees C. This letter shows that SiC bipolar BGVRs are capable of providing stable voltage references over a wide temperature range.
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