4.6 Article

Wide Temperature Range Integrated Bandgap Voltage References in 4H-SiC

期刊

IEEE ELECTRON DEVICE LETTERS
卷 37, 期 2, 页码 146-149

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2508064

关键词

Silicon carbide; bandgap reference; BJT; high temperature integrated circuit; voltage reference

资金

  1. Swedish Foundation for Strategic Research through HOTSiC Program

向作者/读者索取更多资源

Three fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H-SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 degrees C to 500 degrees C. The three BGVRs are functional and exhibit 46 ppm/degrees C, 131 ppm/degrees C, and 120 ppm/degrees C output voltage variations from 25 degrees C up to 500 degrees C. This letter shows that SiC bipolar BGVRs are capable of providing stable voltage references over a wide temperature range.

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