期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 8, 页码 994-997出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2582859
关键词
Neuromorphic system; potentiation; resistive memory (RRAM); synaptic behavior
资金
- Ministry of Science, ICT and Future Planning through the Pioneer Research Center Program within the National Research Foundation of Korea [2012-0009460]
- National Research Foundation of Korea [2012-0009461] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We analyze the response of identical pulses on a filamentary resistive memory (RRAM) to implement the synapse function in neuromorphic systems. Our findings show that the multilevel states of conductance are achieved by varying the measurement conditions related to the formation and rupture of a conductive filament. Furthermore, abrupt set switching behavior in the RRAM leads to an unchanged conductance state, leading to degradation in the accuracy of pattern recognition. Thus, we demonstrate a linear potentiation (or depression) behavior of conductance under identical pulses using the effect of barrier layer on the switching, which was realized by fabricating an RRAM on top of an Al electrode. As a result, when the range of the conductance is symmetrically controlled at both polarities, a significantly improved accuracy is achieved for pattern recognition using a neural network with a multilayer perceptron.
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