期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 1, 页码 84-87出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2503920
关键词
Hot-carrier degradation; Si-H bond dissociation; temperature behavior; electron-electron scattering; modeling; interface traps; MOSFET
资金
- Austrian Science Fund (FWF) [P23598, P26382]
- European Community [619234, 619246]
- Austrian Science Fund (FWF) [P26382] Funding Source: Austrian Science Fund (FWF)
Using our physics-based model for hot-carrier degradation (HCD), we analyze the temperature behavior of HCD in nMOSFETs with a channel length of 44 nm. It was observed that, contrary to most previous findings, the linear drain current change (Delta I-d,I-lin) measured during hot-carrier stress in these devices appears to be lower at higher temperatures. However, the difference between the Delta I-d,I-lin values obtained at different temperatures decreases as the stress voltage increases. This trend is attributed to the single-carrier process of Si-H bond rupture, which is enhanced by the electron-electron scattering. We also consider another important modeling aspect, namely, the vibrational life-time of the Si-H bond, which also depends on the temperature. We finally show that our HCD model can successfully capture the temperature behavior of HCD with physically reasonable parameters.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据