期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 1, 页码 67-69出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2503298
关键词
Gallium arsenide (GaAs); high-gain mode; photoconductive semiconductor switch
资金
- National Natural Science Foundational of China [61427814, 51377133, 51477140]
- Ultrafast Photo-Electronic Technology Innovation Group of Shaanxi Province [2014KCT-13]
- China Postdoctoral Science Foundation [2015T81044]
- Ultrafast Photo-Electronic Technology Innovation Group, Xi'an University of Technology [108-00T1401]
This letter reports the temperature-dependence of high-gain operation in semi-insulating GaAs photoconductive semiconductor switches at 1.6 mu J laser diode excitation. Under the excitation of two different spot patterns, the electric field threshold for high-gain operation is investigated by varying the temperature. In addition, the switching characteristics dependence on temperature are also studied under the perpendicular spot excitation.
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