期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 1, 页码 119-122出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2501323
关键词
Contact resistance; interlayer resistance; Schottky barrier resistance; multilayer MoS2 FET; intrinsic limit
资金
- Department of Electronics and Information Technology, Government of India, within the Ministry of Communications and Information Technology, through the Project Centre for Excellence in Nanoelectronics-Phase II
A new method for the separation of contact resistance (R-contact) into Schottky barrier resistance (R-SB) and interlayer resistance (R-IL) is proposed for multilayered MoS2 FETs. While R-SB varies exponentially with Schottky barrier height (Phi(bn)), R-IL essentially remains unchanged. An empirical model utilizing this dependence of R-contact versus Phi(bn) is proposed and fits to the experimental data. The results, on comparison with the existing reports of lowest R-contact, suggest that the extracted R-IL (1.53 k Omega.mu m) for an unaltered channel would determine the lower limit of intrinsic R-contact even for barrierless contacts for multilayered exfoliated MoS2 FETs.
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