期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 9, 页码 1147-1149出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2593029
关键词
Gallium arsenide (GaAs); high gain; photoconductive semiconductor switch; quench; avalanche
资金
- National Basic Research Program of China [2014CB339802]
- National Natural Science Foundation of China [61427814, 51377133, 51477140]
- Ultrafast Photo-Electronic Technology Innovation Group of Shaanxi Province [2014KCT-13]
In this letter, we show that the quenched high gain (HG) operation of gallium arsenide photoconductive semiconductor switches can be achieved with an excitation energy as low as 8 nJ. The minimum pulse width of 1.23 ns is obtained and the corresponding bias electric field is 71.8 kV/cm. The concept of an avalanche gain is proposed to verify that the avalanche level is remained in the quenched HG operation.
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