InAlGaAs/InP-Based Laser Photovoltaic Converter at ∼1070 nm

Interest in single-junction III-V-based semiconductor photovoltaic (PV) devices under monochromatic illumination has been renewed in recent years due to their potential to produce high conversion efficiencies. We have designed a PV converter for monochromatic power conversion at similar to 1070 nm, which would be ideal for Nd-/Yb-doped solid-state laser sources emitting from 1030 to 1070 nm. A single-junction PV converter is developed on InP platform using quaternary InAlGaAs Q1.1 eV as absorption material. The front grid is designed for the Gaussian nature of the incident laser beam to achieve the optimum power conversion. Preliminary tests are performed on devices under a 1070-nm laser. An open circuit voltage of 0.79 V, the current density up to 5.7 A/cm(2), and the fill factor of 0.79 have been achieved. Efficiency up to 40.7% has been achieved at an incident intensity of similar to 0.16 W/cm(2). Efficiency of these devices can be further improved by design optimization and suppressing series resistance.