期刊
ADVANCED MATERIALS
卷 33, 期 48, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202105694
关键词
2D materials; ambient stability; black phosphorus; charge carrier mobility; molecular heterostructures
类别
资金
- Deutsche Forschungsgemeinschaft (MX-OSMOPED project)
- ERC Consolidator Grant on T2DCP
- M-ERA-NET project HYSUCAP
- SPES3 project - German Ministry for Education and Research (BMBF) under Forschung fur neue Mikroelektronik (ForMikro) program [881603]
- China Scholarship Council (CSC)
- FLAG-ERA H2O Project (DFG) [TU149/9-1]
- SPP 2244 2DMP (DFG) [TU149/13-1]
The molecular heterostructures of black phosphorus (BP) and hexaazatriphenylene derivatives (BP/HATs) improve environmental stability and charge transport properties, decreasing surface electron density and enhancing carrier mobility. The strategy not only extends the ambient lifetime of BP sheets but also provides a new avenue for enhancing the physicochemical properties of other air-sensitive 2D semiconductors.
Overcoming the intrinsic instability and preserving unique electronic properties are key challenges for the practical applications of black phosphorus (BP) under ambient conditions. Here, it is demonstrated that molecular heterostructures of BP and hexaazatriphenylene derivatives (BP/HATs) enable improved environmental stability and charge transport properties. The strong interfacial coupling and charge transfer between the HATs and the BP lattice decrease the surface electron density and protect BP sheets from oxidation, resulting in an excellent ambient lifetime of up to 21 d. Importantly, HATs increase the charge scattering time of BP, contributing to an improved carrier mobility of 97 cm(2) V-1 s(-1), almost three times of the pristine BP films, based on noninvasive THz spectroscopic studies. The film mobility is an order of magnitude larger than previously reported values in exfoliated 2D materials. The strategy opens up new avenues for versatile applications of BP sheets and provides an effective method for tuning the physicochemical properties of other air-sensitive 2D semiconductors.
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