期刊
ADVANCED MATERIALS
卷 34, 期 48, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202108473
关键词
2D materials; amplifiers; diodes; field-effect transistors; frequency multipliers; graphene; monolithic microwave integrated circuits
类别
资金
- German Research Foundation (DFG) [NE1633/3-2, WA 4139/1-1]
- German Ministry of Education and Research (BMBF) [03XP0210]
- European Commission [785219, 881603, 829035, 863337, 101006963, 952792]
- Projekt DEAL
This article reviews the application of graphene in high-frequency circuits. It provides detailed information on the growth and transfer methods of graphene, discusses the construction of GFETs and graphene diodes, and explores the possibilities and limitations of using them in different circuits.
Over the past two decades, research on 2D materials has received much interest. Graphene is the most promising candidate regarding high-frequency applications thus far due to is high carrier mobility. Here, the research about the employment of graphene in micro- and millimeter-wave circuits is reviewed. The review starts with the different methodologies to grow and transfer graphene, before discussing the way graphene-based field-effect-transistors (GFETs) and diodes are built. A review on different approaches for realizing these devices is provided before discussing the employment of both GFETs and graphene diodes in different micro- and millimeter-wave circuits, showing the possibilities but also the limitations of this 2D material for high-frequency applications.
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