4.8 Article

Transfer-Enabled Fabrication of Graphene Wrinkle Arrays for Epitaxial Growth of AlN Films

期刊

ADVANCED MATERIALS
卷 34, 期 1, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202105851

关键词

AlN; chemical vapor deposition; light emitting diodes; step bunches; transfer; wrinkle

资金

  1. National Laboratory for Molecular Sciences [BNLMS-CXTD-202001]
  2. Beijing Municipal Science & Technology Commission [Z181100004818001, Z191100000819005, Z191100000819007, Z201100008720005]
  3. National Basic Research Program of China [2016YFA0200101, 2016YFA0200103, 2019YFA0708203]
  4. National Natural Science Foundation of China [21525310, 61974139, 51432002, 51520105003]

向作者/读者索取更多资源

Understanding the formation mechanism of transfer-related graphene wrinkles allows for the fabrication of wrinkle arrays without altering the crystalline orientation of the entire graphene film. The choice of transfer medium with poor wettability on the corrugated surface of graphene is key to the formation of wrinkles, providing a new way to modify the surface properties of graphene for potential applications.
Formation of graphene wrinkle arrays can periodically alter the electrical properties and chemical reactivity of graphene, which is promising for numerous applications. However, large-area fabrication of graphene wrinkle arrays remains unachievable with a high density and defined orientations, especially on rigid substrates. Herein, relying on the understanding of the formation mechanism of transfer-related graphene wrinkles, the graphene wrinkle arrays are fabricated without altering the crystalline orientation of entire graphene films. The choice of the transfer medium that has poor wettability on the corrugated surface of graphene is proven to be the key for the formation of wrinkles. This work provides a deep understanding of formation process of transfer-related graphene wrinkles and opens up a new way for periodically modifying the surface properties of graphene for potential applications, including direct growth of AlN epilayers and deep ultraviolet light emitting diodes.

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