相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Surface charge transfer doping for two-dimensional semiconductor-based electronic and optoelectronic devices
Yanan Wang et al.
NANO RESEARCH (2021)
Electrical characterization of 2D materials-based field-effect transistors
Sekhar Babu Mitta et al.
2D MATERIALS (2021)
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices
Ankur Nipane et al.
ACS APPLIED MATERIALS & INTERFACES (2021)
Origins of genuine Ohmic van der Waals contact between indium and MoS2
Bum-Kyu Kim et al.
NPJ 2D MATERIALS AND APPLICATIONS (2021)
Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS2 Monolayer
Fabio Bussolotti et al.
ACS NANO (2021)
Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-Pinning of van der Waals Contacts
Krishna Murali et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
Engineering Schottky-to-Ohmic contact transition for 2D metal-semiconductor junctions
Xiang Ding et al.
APPLIED PHYSICS LETTERS (2021)
Demystifying the role of channel region in two-dimensional transistors
Ankur Nipane et al.
APPLIED PHYSICS EXPRESS (2021)
Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions
Henry Yu et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2021)
Ultralow contact resistance between semimetal and monolayer semiconductors
Pin-Chun Shen et al.
NATURE (2021)
Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Goutham Arutchelvan et al.
SCIENTIFIC REPORTS (2021)
Transfer of large-scale two-dimensional semiconductors: challenges and developments
Adam J. Watson et al.
2D MATERIALS (2021)
Fermi-Level Pinning Free High-Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts
Tien Dat Ngo et al.
ADVANCED ELECTRONIC MATERIALS (2021)
Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
Shisheng Li et al.
ADVANCED SCIENCE (2021)
Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors
Liting Liu et al.
NATURE ELECTRONICS (2021)
Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors
Jae Eun Seo et al.
ACS APPLIED MATERIALS & INTERFACES (2021)
Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers
Jingying Zheng et al.
ADVANCED MATERIALS (2021)
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions
Xiaochi Liu et al.
APPLIED PHYSICS LETTERS (2021)
Single-crystal, large-area, fold-free monolayer graphene
Meihui Wang et al.
NATURE (2021)
Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant
Abhinandan Borah et al.
ACS APPLIED ELECTRONIC MATERIALS (2021)
Ohmic Contact Engineering for Two-Dimensional Materials
Yue Zheng et al.
CELL REPORTS PHYSICAL SCIENCE (2021)
Fermi-level depinning of 2D transition metal dichalcogenide transistors
Ruo-Si Chen et al.
JOURNAL OF MATERIALS CHEMISTRY C (2021)
Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities
Shi-Jun Liang et al.
ADVANCED MATERIALS (2020)
Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors
Jisu Jang et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer
Sang-Soo Chee et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance
Xiaochi Liu et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Van der Waals metallic alloy contacts for multifunctional devices
Kai Xu et al.
2D MATERIALS (2020)
Doping-free complementary WSe2 circuit via van der Waals metal integration
Lingan Kong et al.
NATURE COMMUNICATIONS (2020)
Directly Probing Effective-Mass Anisotropy of Two-Dimensional ReSe2 in Schottky Tunnel Transistors
Xiaochi Liu et al.
PHYSICAL REVIEW APPLIED (2020)
Strain-engineering the Schottky barrier and electrical transport on MoS2
Ashby Phillip John et al.
NANOTECHNOLOGY (2020)
Uncovering the Effects of Metal Contacts on Monolayer MoS2
Kirstin Schauble et al.
ACS NANO (2020)
Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors
Andrew J. Arnold et al.
ACS NANO (2020)
Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
Christopher M. Smyth et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2020)
Insulators for 2D nanoelectronics: the gap to bridge
Yury Yu. Illarionov et al.
NATURE COMMUNICATIONS (2020)
Control of the Schottky Barrier and Contact Resistance at Metal-WSe2Interfaces by Polymeric Doping
Tien Dat Ngo et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain
W. X. Zhang et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2020)
Charge-Ferroelectric Transition in Ultrathin Na0.5Bi4.5Ti4O15 Flakes Probed via a Dual-Gated Full van der Waals Transistor
Xiaochi Liu et al.
ADVANCED MATERIALS (2020)
Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure
Yu Lan et al.
NANOSCALE RESEARCH LETTERS (2020)
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit
Seunguk Song et al.
NATURE ELECTRONICS (2020)
Metal-2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning
Qian Wang et al.
JOURNAL OF MATERIALS CHEMISTRY C (2020)
Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides
Kai Sotthewes et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2019)
van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe
Tao Shen et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2019)
Van der Waals integration before and beyond two-dimensional materials
Yuan Liu et al.
NATURE (2019)
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
Yan Wang et al.
NATURE (2019)
Tuning superconductivity in twisted bilayer graphene
Matthew Yankowitz et al.
SCIENCE (2019)
A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2-Metal Junction
Zheng Yang et al.
ADVANCED MATERIALS (2019)
Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit
Samuel W. LaGasse et al.
ADVANCED MATERIALS (2019)
Disorder in van der Waals heterostructures of 2D materials
Daniel Rhodes et al.
NATURE MATERIALS (2019)
Quantum Dot Formation in Controllably Doped Graphene Nanoribbon
Zhongwang Wang et al.
ACS NANO (2019)
Adlayer-Free Large-Area Single Crystal Graphene Grown on a Cu(111) Foil
Da Luo et al.
ADVANCED MATERIALS (2019)
Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts
Zhihui Cheng et al.
NANO LETTERS (2019)
Contact Engineering High-Performance n-Type MoTe2 Transistors
Michal J. Mleczko et al.
NANO LETTERS (2019)
One-Dimensional Edge Contacts to a Monolayer Semiconductor
Achint Jain et al.
NANO LETTERS (2019)
Graphene and two-dimensional materials for silicon technology
Deji Akinwande et al.
NATURE (2019)
Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors
Homin Choi et al.
ACS NANO (2019)
Ohmic Contact in 2D Semiconductors via the Formation of a Benzyl Viologen Interlayer
Dewu Yue et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Contacting MoS2 to MXene: Vanishing p-Type Schottky Barrier and Enhanced Hydrogen Evolution Catalysis
Jinxuan You et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2019)
A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics
Cora M. Went et al.
SCIENCE ADVANCES (2019)
Strain-engineered robust and Schottky-barrier-free contact in 2D metal-semiconductor heterostructure
Huirong Jing et al.
ELECTRONIC STRUCTURE (2019)
Schottky Contact in Monolayer WS2 Field-Effect Transistors
Hao Tang et al.
ADVANCED THEORY AND SIMULATIONS (2019)
Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography
Xiaorui Zheng et al.
NATURE ELECTRONICS (2019)
Transferred via contacts as a platform for ideal two-dimensional transistors
Younghun Jung et al.
NATURE ELECTRONICS (2019)
Engineering the Palladium-WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
Christopher M. Smyth et al.
ACS APPLIED NANO MATERIALS (2019)
Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors
Zhi-Qang Fan et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization
Bo Lei et al.
ACS NANO (2018)
Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
Gwang-Sik Kim et al.
ACS NANO (2018)
Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts
Ahmet Avsar et al.
ADVANCED MATERIALS (2018)
Contact engineering for 2D materials and devices
Daniel S. Schulman et al.
CHEMICAL SOCIETY REVIEWS (2018)
On Low-Resistance Contacts to 2-D MoTe2 by Crystalline Phase Junctions
Zhipeng Dong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Via Method for Lithography Free Contact and Preservation of 2D Materials
Evan J. Telford et al.
NANO LETTERS (2018)
Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts
Akshay A. Murthy et al.
NANO LETTERS (2018)
Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials
Hunyoung Bark et al.
NANOSCALE (2018)
2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning
Wenyang Zhou et al.
NANOSCALE (2018)
Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions
Yuan Liu et al.
NATURE (2018)
Unconventional superconductivity in magic-angle graphene superlattices
Yuan Cao et al.
NATURE (2018)
Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors
Xingshuai Lv et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2018)
Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions
Shiqi Liu et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Electrically tunable localized states in sub-band of bilayer graphene nanoribbon
Zhongwang Wang et al.
APPLIED PHYSICS LETTERS (2018)
Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
Yuan Cao et al.
NATURE (2018)
Reduction of Fermi level pinning at Au-MoS2 interfaces by atomic passivation on Au surface
Kyung-Ah Min et al.
2D MATERIALS (2017)
Band Alignment at Au/MoS2 Contacts: Thickness Dependence of Exfoliated Flakes
Ahrum Sohn et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2017)
Argon Plasma Induced Phase Transition in Monolayer MoS2
Jianqi Zhu et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2017)
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
Lili Cai et al.
NANO LETTERS (2017)
Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2
Alexander Kerelsky et al.
NANO LETTERS (2017)
Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes
Xu Cui et al.
NANO LETTERS (2017)
Structural phase transition in monolayer MoTe2 driven by electrostatic doping
Ying Wang et al.
NATURE (2017)
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
Xiao-Xi Li et al.
NATURE COMMUNICATIONS (2017)
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash et al.
SCIENTIFIC REPORTS (2017)
High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors
Adha Sukma Aji et al.
ADVANCED FUNCTIONAL MATERIALS (2017)
Contact Effect of ReS2/Metal Interface
Jae Young Park et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Scanning tunneling spectroscopy of van der Waals graphene/semiconductor interfaces: absence of Fermi level pinning
T. Le Quang et al.
2D MATERIALS (2017)
Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts
Pantelis Bampoulis et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Changsik Kim et al.
ACS NANO (2017)
Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2
Seunghyun Lee et al.
NANO LETTERS (2016)
Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain
Seunghyun Song et al.
NANO LETTERS (2016)
Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices
Xiujuan Zhang et al.
ADVANCED MATERIALS (2016)
High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
Jingli Wang et al.
ADVANCED MATERIALS (2016)
P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor
Xiaochi Liu et al.
ADVANCED MATERIALS (2016)
Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes
Yuanyue Liu et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2016)
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
Chris D. English et al.
NANO LETTERS (2016)
Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
Mahito Yamamoto et al.
NANO LETTERS (2016)
Two-dimensional van der Waals materials
Pulickel Ajayan et al.
PHYSICS TODAY (2016)
Defect engineering of two-dimensional transition metal dichalcogenides
Zhong Lin et al.
2D MATERIALS (2016)
Ohmic Contacts to 2D Semiconductors through van der Waals Bonding
Mojtaba Farmanbar et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Van der Waals heterostructures and devices
Yuan Liu et al.
NATURE REVIEWS MATERIALS (2016)
Two-dimensional semiconductors for transistors
Manish Chhowalla et al.
Nature Reviews Materials (2016)
3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides
Yuzheng Guo et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Surface Defects on Natural MoS2
Rafik Addou et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts
Y. Guo et al.
APPLIED PHYSICS LETTERS (2015)
Phase engineering of transition metal dichalcogenides
Damien Voiry et al.
CHEMICAL SOCIETY REVIEWS (2015)
Edge contacts of graphene formed by using a controlled plasma treatment
D. W. Yue et al.
NANOSCALE (2015)
Electrical contacts to two-dimensional semiconductors
Adrien Allain et al.
NATURE MATERIALS (2015)
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Xu Cui et al.
NATURE NANOTECHNOLOGY (2015)
Controlling the Schottky barrier at MoS2/metal contacts by inserting a BN monolayer
Mojtaba Farmanbar et al.
PHYSICAL REVIEW B (2015)
Phase patterning for ohmic homojunction contact in MoTe2
Suyeon Cho et al.
SCIENCE (2015)
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
Ashish V. Penumatcha et al.
NATURE COMMUNICATIONS (2015)
Tunability of Short-Channel Effects in MoS2 Field-Effect Devices
Feng Zhang et al.
NANO LETTERS (2015)
Defect-Dominated Doping and Contact Resistance in MoS2
Stephen McDonnell et al.
ACS NANO (2014)
High-performance MoS2 transistors with low-resistance molybdenum contacts
Jiahao Kang et al.
APPLIED PHYSICS LETTERS (2014)
Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen
Daisuke Kiriya et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2014)
The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS2 Interfaces
Cheng Gong et al.
NANO LETTERS (2014)
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
Steven Chuang et al.
NANO LETTERS (2014)
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Lingming Yang et al.
NANO LETTERS (2014)
2D CRYSTAL SEMICONDUCTORS Intimate contacts
Debdeep Jena et al.
NATURE MATERIALS (2014)
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Rajesh Kappera et al.
NATURE MATERIALS (2014)
Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
Avinash P. Nayak et al.
NATURE COMMUNICATIONS (2014)
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Jiahao Kang et al.
PHYSICAL REVIEW X (2014)
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
Gwan-Hyoung Lee et al.
ACS NANO (2013)
WSe2 field effect transistors with enhanced ambipolar characteristics
Saptarshi Das et al.
APPLIED PHYSICS LETTERS (2013)
Sulfur vacancies in monolayer MoS2 and its electrical contacts
D. Liu et al.
APPLIED PHYSICS LETTERS (2013)
Band offsets, Schottky barrier heights, and their effects on electronic devices
John Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2013)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
Wei Liu et al.
NANO LETTERS (2013)
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
Hui Fang et al.
NANO LETTERS (2013)
Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
Jen-Ru Chen et al.
NANO LETTERS (2013)
From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation
Hannu-Pekka Komsa et al.
PHYSICAL REVIEW B (2013)
One-Dimensional Electrical Contact to a Two-Dimensional Material
L. Wang et al.
SCIENCE (2013)
Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces
Mark T. Greiner et al.
NPG ASIA MATERIALS (2013)
Channel Length Scaling of MoS2 MOSFETs
Han Liu et al.
ACS NANO (2012)
Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
Jens Meyer et al.
ADVANCED MATERIALS (2012)
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Hui Fang et al.
NANO LETTERS (2012)
First-principles study of metal-graphene interfaces
Cheng Gong et al.
JOURNAL OF APPLIED PHYSICS (2010)
Tunneling Spin Injection into Single Layer Graphene
Wei Han et al.
PHYSICAL REVIEW LETTERS (2010)
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
Seyoung Kim et al.
APPLIED PHYSICS LETTERS (2009)
Measurement of the elastic properties and intrinsic strength of monolayer graphene
Changgu Lee et al.
SCIENCE (2008)
Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact
Berend T. Jonker et al.
NATURE PHYSICS (2007)
Experimental observation of the quantum Hall effect and Berry's phase in graphene
YB Zhang et al.
NATURE (2005)
Two-dimensional gas of massless Dirac fermions in graphene
KS Novoselov et al.
NATURE (2005)
Electric field effect in atomically thin carbon films
KS Novoselov et al.
SCIENCE (2004)