4.8 Review

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Review Chemistry, Physical

Surface charge transfer doping for two-dimensional semiconductor-based electronic and optoelectronic devices

Yanan Wang et al.

Summary: Doping of semiconductors is essential for modern electronics and optoelectronics, and surface charge transfer doping is emerging as an effective and reliable technique for 2D materials, especially 2D semiconductors. The recent advances and developments in SCTD for 2D semiconductors, as well as its application in electronic and optoelectronic devices, have been summarized.

NANO RESEARCH (2021)

Review Materials Science, Multidisciplinary

Electrical characterization of 2D materials-based field-effect transistors

Sekhar Babu Mitta et al.

Summary: 2D materials, with their atomic thinness and rich electronic band structure, show great promise for future nanoelectronics; however, the electrical characterization methods for 2D devices need to be revisited to ensure accuracy and applicability.

2D MATERIALS (2021)

Article Nanoscience & Nanotechnology

Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices

Ankur Nipane et al.

Summary: The study presents a selective, damage-free atomic layer etch method for layer-by-layer removal of 2D materials without altering underlying properties. The method preserves material performance and successfully fabricates layers for high-performance 2D devices. Furthermore, a technique using sacrificial WSe2 layer for channel protection during processing is demonstrated.

ACS APPLIED MATERIALS & INTERFACES (2021)

Article Nanoscience & Nanotechnology

Origins of genuine Ohmic van der Waals contact between indium and MoS2

Bum-Kyu Kim et al.

Summary: The study reports the fabrication of ultraclean vdW contacts between indium and molybdenum disulfide, elucidating the atomistic origins of its Ohmic-like transport properties. By evaporating low thermal energy indium and cooling the substrate holder with liquid nitrogen, atomically clean In/MoS2 vdW contacts were achieved, exhibiting high-quality Ohmic-like transport behavior over a wide temperature range. The research suggests that generating a strong density of in-gap states while minimizing interfacial charge transfer could be a general strategy to reduce contact resistance for two-dimensional vdW materials.

NPJ 2D MATERIALS AND APPLICATIONS (2021)

Article Chemistry, Multidisciplinary

Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS2 Monolayer

Fabio Bussolotti et al.

Summary: This study investigates the electronic properties of MoS2 monolayer interfaced with graphite using photoemission spectroscopy, revealing the significant impact of S-vacancies on core level and valence band binding energies. The results suggest that Fermi level pinning at deep S-vacancy gap states is responsible for the large electron injection barrier at the MoS2 ML interface with low work function metals.

ACS NANO (2021)

Article Chemistry, Multidisciplinary

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-Pinning of van der Waals Contacts

Krishna Murali et al.

Summary: A new technique is proposed to accurately estimate the Schottky barrier height at van der Waals contact interfaces, showing the universal de-pinned nature of van der Waals contacts and demonstrating superior ambipolar carrier injection properties.

ADVANCED FUNCTIONAL MATERIALS (2021)

Article Physics, Applied

Engineering Schottky-to-Ohmic contact transition for 2D metal-semiconductor junctions

Xiang Ding et al.

Summary: Research indicates that the formation of Ohmic contacts for 2D materials is crucial for high-performance electronic devices, with current studies mostly focused on the Schottky regime. Density functional calculations have identified a Schottky-to-Ohmic contact transition boundary and demonstrated stable p-type Ohmic contacts. Weak Fermi level pinning effect in the Schottky region and strong pinning-like behavior in the Ohmic region are observed, with a discontinuity near the contact transition boundary.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Demystifying the role of channel region in two-dimensional transistors

Ankur Nipane et al.

Summary: The research on back-gated field-effect transistors shows that in the OFF state, the current is limited by the channel, whereas in the ON state it is limited by the source-contact. This new understanding helps to clarify the general underestimation of extracted SB height in experimental long-channel BGFETs.

APPLIED PHYSICS EXPRESS (2021)

Article Chemistry, Physical

Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions

Henry Yu et al.

Summary: The electronic transport through a metal|semiconductor heterojunction is mainly determined by the Schottky barrier, with the pinning strength in 3D structures depending on the ratio between interface quantum capacitance and metal surface capacitance. In 2D structures, the interface dipole does not affect band alignment but influences the Schottky barrier and transport. The turn-on voltage and pinning strength in 2D contacts are affected by the physical parameter l/lambda(D), the ratio between interface width and thermal de Broglie wavelength.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2021)

Article Multidisciplinary Sciences

Ultralow contact resistance between semimetal and monolayer semiconductors

Pin-Chun Shen et al.

Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.

NATURE (2021)

Article Multidisciplinary Sciences

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

Goutham Arutchelvan et al.

Summary: Two-dimensional semiconducting materials, such as MoS2, show promising performance for ultimate device scaling, with excellent transconductance and subthreshold swing. The study reveals that scaling the top-contact length does not affect the contact resistance and electrostatics in three monolayers MoS2 transistors, due to dominant edge injection. Furthermore, short channel lengths lead to subthreshold swing degradation, which can be mitigated by reducing the capacitive effective oxide thickness and lowering the Schottky barrier height.

SCIENTIFIC REPORTS (2021)

Review Materials Science, Multidisciplinary

Transfer of large-scale two-dimensional semiconductors: challenges and developments

Adam J. Watson et al.

Summary: Two-dimensional materials provide opportunities for exploring fundamental science and applications at atomic thickness limits. The family of 2D semiconductors, particularly the group-VI transition metal dichalcogenides (TMDs), have attracted attention for their potential in high on-off ratio transistors and optoelectronic devices. Methods for transferring 2D films, especially those grown by chemical vapor deposition (CVD), are crucial for further investigation and improvement of device performance.

2D MATERIALS (2021)

Article Nanoscience & Nanotechnology

Fermi-Level Pinning Free High-Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

Tien Dat Ngo et al.

Summary: Effective control of device polarity in 2D transistors was achieved through a doping-free approach utilizing vdW bottom contacts, resulting in high performance 2D inverters with a gain of 198. This study demonstrates the potential for integrating 2D materials into semiconductor devices with improved controllability and performance.

ADVANCED ELECTRONIC MATERIALS (2021)

Article Chemistry, Multidisciplinary

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Shisheng Li et al.

Summary: This study presents a novel method for growing high-quality rhenium and vanadium-doped TMDC monolayers using chemical vapor deposition with mixed molten salts. A tunable semiconductor to metal transition is observed in the doped TMDCs, with significantly improved electrical conductivity. By using doped TMDCs as van der Waals contacts, the performance of 2D electronics has been substantially enhanced.

ADVANCED SCIENCE (2021)

Article Engineering, Electrical & Electronic

Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

Liting Liu et al.

Summary: Vertical transistors using molybdenum disulfide with channel lengths down to one atomic layer can be created with a high-quality metal-semiconductor interface through a mechanical van der Waals transfer process.

NATURE ELECTRONICS (2021)

Article Nanoscience & Nanotechnology

Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors

Jae Eun Seo et al.

Summary: Two-dimensional materials are considered key materials for future logic devices due to their excellent electrostatic integrity, but carrier polarity control in 2D material field-effect transistors remains a challenging issue. The carrier polarity in PdSe2 FETs can be modulated simply by changing the metal contact, allowing for the realization of complementary logic functions in PdSe2-based CMOS circuits. Ultimately, this study suggests the potential for PdSe2-based CMOS logic circuits with different metal contacts for n- and p-MOSFETs.

ACS APPLIED MATERIALS & INTERFACES (2021)

Article Chemistry, Multidisciplinary

Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers

Jingying Zheng et al.

Summary: A chemical approach has been developed for constructing P-type field-effect transistors with low contact barriers by simultaneously synthesizing and integrating 2D PdTe2 with various low-dimensional semiconductors. The synthesized 2D PdTe2 exhibits high electrical and thermal conductivity, surpassing other transition metal dichalcogenides and even some metals. By chemically constructing and integrating 2D components, the contact barriers have been significantly reduced, leading to an increase in device performance.

ADVANCED MATERIALS (2021)

Article Physics, Applied

High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions

Xiaochi Liu et al.

Summary: This study demonstrates a unique structure of two-dimensional p-MOSFET with controlled oxygen plasma-induced degenerate p-doping in contact areas, achieving excellent device performances including low threshold voltage, high on/off ratio, and high hole mobility.

APPLIED PHYSICS LETTERS (2021)

Article Multidisciplinary Sciences

Single-crystal, large-area, fold-free monolayer graphene

Meihui Wang et al.

Summary: Restricting the initial growth temperatures used for chemical vapour deposition of graphene on metal foils produces optimum conditions for growing large areas of fold-free, single-crystal graphene, which exhibit highly uniform transport properties.

NATURE (2021)

Article Engineering, Electrical & Electronic

Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

Abhinandan Borah et al.

Summary: This study reports the use of tungsten oxyselenide as a dopant to achieve the lowest total p-type contact resistance and high dopant density in sub-5 nm thin WSe2. The doping remains active at low temperatures and shows promising stability, leading to significant improvement in device characteristics and potential for high-performance p-type transistors.

ACS APPLIED ELECTRONIC MATERIALS (2021)

Review Chemistry, Multidisciplinary

Ohmic Contact Engineering for Two-Dimensional Materials

Yue Zheng et al.

Summary: This article summarizes recent progress and developments in contact engineering of 2D materials for the realization of ohmic contacts in 2D electronic devices. The basic physics of contacts for both Si and 2D materials is briefly introduced, followed by various engineering strategies including band matching, doping, phase engineering, insertion of buffer layers, 2D/metal van der Waals contacts, and edge contacts. Opportunities and challenges for optimizing contacts for future 2D electronics are discussed.

CELL REPORTS PHYSICAL SCIENCE (2021)

Review Materials Science, Multidisciplinary

Fermi-level depinning of 2D transition metal dichalcogenide transistors

Ruo-Si Chen et al.

Summary: This review summarizes the recent progress on how to circumvent Fermi-level pinning (FLP) between 2D TMDs semiconductors and metals, including introducing related concepts, discussing factors contributing to FLP, and strategies of Fermi-level depinning. The summary and outlook provides a guideline for suppressing FLP in the process of fabricating high-performance 2D TMD devices.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Review Chemistry, Multidisciplinary

Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities

Shi-Jun Liang et al.

ADVANCED MATERIALS (2020)

Article Nanoscience & Nanotechnology

Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

Jisu Jang et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Article Nanoscience & Nanotechnology

Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer

Sang-Soo Chee et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Article Nanoscience & Nanotechnology

Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance

Xiaochi Liu et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Article Materials Science, Multidisciplinary

Van der Waals metallic alloy contacts for multifunctional devices

Kai Xu et al.

2D MATERIALS (2020)

Article Multidisciplinary Sciences

Doping-free complementary WSe2 circuit via van der Waals metal integration

Lingan Kong et al.

NATURE COMMUNICATIONS (2020)

Article Nanoscience & Nanotechnology

Strain-engineering the Schottky barrier and electrical transport on MoS2

Ashby Phillip John et al.

NANOTECHNOLOGY (2020)

Article Chemistry, Multidisciplinary

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Kirstin Schauble et al.

ACS NANO (2020)

Review Multidisciplinary Sciences

Insulators for 2D nanoelectronics: the gap to bridge

Yury Yu. Illarionov et al.

NATURE COMMUNICATIONS (2020)

Article Nanoscience & Nanotechnology

Control of the Schottky Barrier and Contact Resistance at Metal-WSe2Interfaces by Polymeric Doping

Tien Dat Ngo et al.

ADVANCED ELECTRONIC MATERIALS (2020)

Article Materials Science, Multidisciplinary

Metal-2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning

Qian Wang et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Article Chemistry, Physical

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

Kai Sotthewes et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2019)

Article Chemistry, Multidisciplinary

van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe

Tao Shen et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2019)

Article Multidisciplinary Sciences

Van der Waals integration before and beyond two-dimensional materials

Yuan Liu et al.

NATURE (2019)

Article Multidisciplinary Sciences

Tuning superconductivity in twisted bilayer graphene

Matthew Yankowitz et al.

SCIENCE (2019)

Article Chemistry, Multidisciplinary

A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS2-Metal Junction

Zheng Yang et al.

ADVANCED MATERIALS (2019)

Article Chemistry, Multidisciplinary

Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit

Samuel W. LaGasse et al.

ADVANCED MATERIALS (2019)

Article Chemistry, Physical

Disorder in van der Waals heterostructures of 2D materials

Daniel Rhodes et al.

NATURE MATERIALS (2019)

Article Chemistry, Multidisciplinary

Quantum Dot Formation in Controllably Doped Graphene Nanoribbon

Zhongwang Wang et al.

ACS NANO (2019)

Article Chemistry, Multidisciplinary

Adlayer-Free Large-Area Single Crystal Graphene Grown on a Cu(111) Foil

Da Luo et al.

ADVANCED MATERIALS (2019)

Article Chemistry, Multidisciplinary

Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts

Zhihui Cheng et al.

NANO LETTERS (2019)

Article Chemistry, Multidisciplinary

Contact Engineering High-Performance n-Type MoTe2 Transistors

Michal J. Mleczko et al.

NANO LETTERS (2019)

Article Chemistry, Multidisciplinary

One-Dimensional Edge Contacts to a Monolayer Semiconductor

Achint Jain et al.

NANO LETTERS (2019)

Review Multidisciplinary Sciences

Graphene and two-dimensional materials for silicon technology

Deji Akinwande et al.

NATURE (2019)

Article Chemistry, Multidisciplinary

Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors

Homin Choi et al.

ACS NANO (2019)

Article Chemistry, Multidisciplinary

Ohmic Contact in 2D Semiconductors via the Formation of a Benzyl Viologen Interlayer

Dewu Yue et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

Article Chemistry, Physical

Contacting MoS2 to MXene: Vanishing p-Type Schottky Barrier and Enhanced Hydrogen Evolution Catalysis

Jinxuan You et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2019)

Article Multidisciplinary Sciences

Schottky Contact in Monolayer WS2 Field-Effect Transistors

Hao Tang et al.

ADVANCED THEORY AND SIMULATIONS (2019)

Article Engineering, Electrical & Electronic

Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

Xiaorui Zheng et al.

NATURE ELECTRONICS (2019)

Article Engineering, Electrical & Electronic

Transferred via contacts as a platform for ideal two-dimensional transistors

Younghun Jung et al.

NATURE ELECTRONICS (2019)

Article Nanoscience & Nanotechnology

Engineering the Palladium-WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts

Christopher M. Smyth et al.

ACS APPLIED NANO MATERIALS (2019)

Article Nanoscience & Nanotechnology

Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors

Zhi-Qang Fan et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

Article Chemistry, Multidisciplinary

Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts

Ahmet Avsar et al.

ADVANCED MATERIALS (2018)

Review Chemistry, Multidisciplinary

Contact engineering for 2D materials and devices

Daniel S. Schulman et al.

CHEMICAL SOCIETY REVIEWS (2018)

Article Engineering, Electrical & Electronic

On Low-Resistance Contacts to 2-D MoTe2 by Crystalline Phase Junctions

Zhipeng Dong et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

Article Chemistry, Multidisciplinary

Via Method for Lithography Free Contact and Preservation of 2D Materials

Evan J. Telford et al.

NANO LETTERS (2018)

Article Chemistry, Multidisciplinary

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Akshay A. Murthy et al.

NANO LETTERS (2018)

Article Multidisciplinary Sciences

Unconventional superconductivity in magic-angle graphene superlattices

Yuan Cao et al.

NATURE (2018)

Article Materials Science, Multidisciplinary

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions

Shiqi Liu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2018)

Article Physics, Applied

Electrically tunable localized states in sub-band of bilayer graphene nanoribbon

Zhongwang Wang et al.

APPLIED PHYSICS LETTERS (2018)

Article Materials Science, Multidisciplinary

Reduction of Fermi level pinning at Au-MoS2 interfaces by atomic passivation on Au surface

Kyung-Ah Min et al.

2D MATERIALS (2017)

Article Chemistry, Physical

Band Alignment at Au/MoS2 Contacts: Thickness Dependence of Exfoliated Flakes

Ahrum Sohn et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2017)

Article Chemistry, Multidisciplinary

Argon Plasma Induced Phase Transition in Monolayer MoS2

Jianqi Zhu et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2017)

Article Chemistry, Multidisciplinary

Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2

Alexander Kerelsky et al.

NANO LETTERS (2017)

Article Multidisciplinary Sciences

Structural phase transition in monolayer MoTe2 driven by electrostatic doping

Ying Wang et al.

NATURE (2017)

Article Multidisciplinary Sciences

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Xiao-Xi Li et al.

NATURE COMMUNICATIONS (2017)

Article Multidisciplinary Sciences

Understanding contact gating in Schottky barrier transistors from 2D channels

Abhijith Prakash et al.

SCIENTIFIC REPORTS (2017)

Article Nanoscience & Nanotechnology

Contact Effect of ReS2/Metal Interface

Jae Young Park et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Nanoscience & Nanotechnology

Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

Pantelis Bampoulis et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Chemistry, Multidisciplinary

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Changsik Kim et al.

ACS NANO (2017)

Article Chemistry, Multidisciplinary

Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

Seunghyun Lee et al.

NANO LETTERS (2016)

Article Chemistry, Multidisciplinary

Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain

Seunghyun Song et al.

NANO LETTERS (2016)

Review Chemistry, Multidisciplinary

Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices

Xiujuan Zhang et al.

ADVANCED MATERIALS (2016)

Article Chemistry, Multidisciplinary

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

Xiaochi Liu et al.

ADVANCED MATERIALS (2016)

Article Chemistry, Multidisciplinary

Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes

Yuanyue Liu et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2016)

Article Chemistry, Multidisciplinary

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Chris D. English et al.

NANO LETTERS (2016)

Article Chemistry, Multidisciplinary

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Mahito Yamamoto et al.

NANO LETTERS (2016)

Article Physics, Multidisciplinary

Two-dimensional van der Waals materials

Pulickel Ajayan et al.

PHYSICS TODAY (2016)

Review Materials Science, Multidisciplinary

Defect engineering of two-dimensional transition metal dichalcogenides

Zhong Lin et al.

2D MATERIALS (2016)

Article Nanoscience & Nanotechnology

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

Mojtaba Farmanbar et al.

ADVANCED ELECTRONIC MATERIALS (2016)

Review Nanoscience & Nanotechnology

Van der Waals heterostructures and devices

Yuan Liu et al.

NATURE REVIEWS MATERIALS (2016)

Article Materials Science, Multidisciplinary

Two-dimensional semiconductors for transistors

Manish Chhowalla et al.

Nature Reviews Materials (2016)

Article Nanoscience & Nanotechnology

3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

Yuzheng Guo et al.

ACS APPLIED MATERIALS & INTERFACES (2015)

Article Nanoscience & Nanotechnology

Surface Defects on Natural MoS2

Rafik Addou et al.

ACS APPLIED MATERIALS & INTERFACES (2015)

Review Chemistry, Multidisciplinary

Phase engineering of transition metal dichalcogenides

Damien Voiry et al.

CHEMICAL SOCIETY REVIEWS (2015)

Article Chemistry, Multidisciplinary

Edge contacts of graphene formed by using a controlled plasma treatment

D. W. Yue et al.

NANOSCALE (2015)

Review Chemistry, Physical

Electrical contacts to two-dimensional semiconductors

Adrien Allain et al.

NATURE MATERIALS (2015)

Article Nanoscience & Nanotechnology

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Xu Cui et al.

NATURE NANOTECHNOLOGY (2015)

Article Materials Science, Multidisciplinary

Controlling the Schottky barrier at MoS2/metal contacts by inserting a BN monolayer

Mojtaba Farmanbar et al.

PHYSICAL REVIEW B (2015)

Article Multidisciplinary Sciences

Phase patterning for ohmic homojunction contact in MoTe2

Suyeon Cho et al.

SCIENCE (2015)

Article Multidisciplinary Sciences

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Ashish V. Penumatcha et al.

NATURE COMMUNICATIONS (2015)

Article Chemistry, Multidisciplinary

Tunability of Short-Channel Effects in MoS2 Field-Effect Devices

Feng Zhang et al.

NANO LETTERS (2015)

Article Chemistry, Multidisciplinary

Defect-Dominated Doping and Contact Resistance in MoS2

Stephen McDonnell et al.

ACS NANO (2014)

Article Physics, Applied

High-performance MoS2 transistors with low-resistance molybdenum contacts

Jiahao Kang et al.

APPLIED PHYSICS LETTERS (2014)

Article Chemistry, Multidisciplinary

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

Daisuke Kiriya et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2014)

Article Chemistry, Multidisciplinary

The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS2 Interfaces

Cheng Gong et al.

NANO LETTERS (2014)

Article Chemistry, Multidisciplinary

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

Steven Chuang et al.

NANO LETTERS (2014)

Article Chemistry, Multidisciplinary

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

Lingming Yang et al.

NANO LETTERS (2014)

News Item Chemistry, Physical

2D CRYSTAL SEMICONDUCTORS Intimate contacts

Debdeep Jena et al.

NATURE MATERIALS (2014)

Article Chemistry, Physical

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

Rajesh Kappera et al.

NATURE MATERIALS (2014)

Article Multidisciplinary Sciences

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Avinash P. Nayak et al.

NATURE COMMUNICATIONS (2014)

Article Physics, Multidisciplinary

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

Jiahao Kang et al.

PHYSICAL REVIEW X (2014)

Article Physics, Applied

WSe2 field effect transistors with enhanced ambipolar characteristics

Saptarshi Das et al.

APPLIED PHYSICS LETTERS (2013)

Article Physics, Applied

Sulfur vacancies in monolayer MoS2 and its electrical contacts

D. Liu et al.

APPLIED PHYSICS LETTERS (2013)

Review Materials Science, Coatings & Films

Band offsets, Schottky barrier heights, and their effects on electronic devices

John Robertson

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2013)

Article Chemistry, Multidisciplinary

High Performance Multilayer MoS2 Transistors with Scandium Contacts

Saptarshi Das et al.

NANO LETTERS (2013)

Article Chemistry, Multidisciplinary

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

Hui Fang et al.

NANO LETTERS (2013)

Article Chemistry, Multidisciplinary

Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

Jen-Ru Chen et al.

NANO LETTERS (2013)

Article Materials Science, Multidisciplinary

From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation

Hannu-Pekka Komsa et al.

PHYSICAL REVIEW B (2013)

Article Multidisciplinary Sciences

One-Dimensional Electrical Contact to a Two-Dimensional Material

L. Wang et al.

SCIENCE (2013)

Review Materials Science, Multidisciplinary

Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces

Mark T. Greiner et al.

NPG ASIA MATERIALS (2013)

Article Chemistry, Multidisciplinary

Channel Length Scaling of MoS2 MOSFETs

Han Liu et al.

ACS NANO (2012)

Review Chemistry, Multidisciplinary

Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

Jens Meyer et al.

ADVANCED MATERIALS (2012)

Article Chemistry, Multidisciplinary

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

Hui Fang et al.

NANO LETTERS (2012)

Article Physics, Applied

First-principles study of metal-graphene interfaces

Cheng Gong et al.

JOURNAL OF APPLIED PHYSICS (2010)

Article Physics, Multidisciplinary

Tunneling Spin Injection into Single Layer Graphene

Wei Han et al.

PHYSICAL REVIEW LETTERS (2010)

Article Multidisciplinary Sciences

Measurement of the elastic properties and intrinsic strength of monolayer graphene

Changgu Lee et al.

SCIENCE (2008)

Article Physics, Multidisciplinary

Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact

Berend T. Jonker et al.

NATURE PHYSICS (2007)

Article Multidisciplinary Sciences

Two-dimensional gas of massless Dirac fermions in graphene

KS Novoselov et al.

NATURE (2005)

Article Multidisciplinary Sciences

Electric field effect in atomically thin carbon films

KS Novoselov et al.

SCIENCE (2004)