Wafer-Scale InN/In2S3 Core-Shell Nanorod Array for Ultrafast Self-Powered Photodetection

Self-powered photodetectors have paved the way for electronic applications in fields such as civilian communication, infrared mapping, and industrial automatic control. However, most self-powered photodetectors have faced photoresponse-speed and device-scale bottlenecks. Herein, a novel, self-powered detector with an ultrafast response speed based on a core-shell InN/In2S3 nanorod array is proposed. A wafer-scale InN/In2S3 nanorod array with good homogeneity is synthesized on Si substrates via a simple two-step method involving molecular beam epitaxy and chemical vapor deposition. The photodetector device exhibits excellent self-powered properties and a high current on/off ratio of 5 x 10(3). Further analyses determined that the device have an excellent photovoltaic responsivity and detectivity of 140 mA center dot W-1 and 4.0 x 10(10) Jones, respectively (0 V). Impressively, the device exhibits an ultrafast photoresponse with a rise/fall time of 22/32 mu s. The self-powered InN/In2S3 photodetector with an ultrafast response speed shows superior potential for electronic applications. The core-shell nanostructure hybrid heterojunction introduces a novel idea for wafer-scale nano-photodetectors.

Automated summary

A self-powered photodetector with ultrafast response speed based on a core-shell nanostructure has been proposed, showing great potential for electronic applications. The device exhibits excellent self-powered properties and high current on/off ratio, with an impressive rise/fall time of 22/32 μs. The wafer-scale nano-photodetectors introduce a novel idea for electronic applications.