期刊
ADVANCED FUNCTIONAL MATERIALS
卷 32, 期 21, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202113255
关键词
2D semiconductors; field-effect transistors; in-plane anisotropy; PdPS; photodetectors
类别
资金
- Singapore National Research Foundation -Competitive Research Program [NRF-CRP22-2019-0007, NRF-CRP21-2018-0007]
- A*STAR under its AME IRG Grant [A2083c0052]
Researchers have successfully studied the unique properties of the pentagonal 2D material penta-PdPS, which has a distinct puckered pentagonal atomic structure and excellent electronic and optoelectronic performance. It has the potential to play an important role in nanoelectronics and optoelectronics.
Pentagonal 2D materials as a new member in the 2D material family have attracted increasing attention due to the exotic physical properties originating from the unique Cairo pentagonal tiling topology. Herein, the penta-PdPS atomic layers as a new air-stable 2D semiconductor with the unique puckered pentagonal low-symmetry structure are successfully exfoliated from bulk crystals grown via chemical vapor transport (CVT). Notably, 2D penta-PdPS exhibits outstanding electronic and optoelectronic performance under 650 nm laser: high electron mobility of approximate to 208 cm(2) V-1 s(-1), an ultrahigh on/off ratio of approximate to 10(8), a high photoresponsivity of 5.2 x 10(4) A W-1, a high photogain of 1.0 x 10(5), an ultrahigh detectivity of 1.0 x 10(13) Jones, respectively. Significantly, the exceptional puckered pentagonal atomic structure of 2D PdPS makes it strong in-plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating a sizeable anisotropic ratio of carrier mobility and photocurrent with the value of up to 3.9 and 2.3, respectively. These excellent properties make 2D Cairo Pentagonal PdPS a potential candidate in nanoelectronics, optoelectronics, polarized-nanoelectronics, which will significantly promote the development of 2D materials.
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