Complementary Metal-Oxide-Semiconductor Compatible 2D Layered Film-Based Gas Sensors by Floating-Gate Coupling Effect

A 2D SnSe2 layered film-based gas detector incorporating a floating-gate device coupled with metal interconnect wiring structures is proposed and demonstrated for the first time. Linear amplification can be readily implemented using a coupling ratio design, which refers to the capacitance ratio between the gate and device in the sense amplifier circuits. A sensitivity of 102 mV ppm(-1) can be obtained using the 2D SnSe2 layered film with a thickness of 10 nm. The 2D SnSe2 layered film-based complementary metal-oxide-semiconductor (CMOS) gas detector features highly sensitive, wide, and adjustable dynamic ranges with a real-time response of the sub-ppm detection limit on NO2 gas. In addition, the synthesis process of the SnSe2 layered film can occur at a low temperature and be operated at room temperature. Furthermore, 3 x 3 gas detector arrays with peripheral circuits demonstrate the functionality of multiple gas detection simultaneously and 16 x 16 arrays with a decoder and other peripheral circuits are constructed and simulated, providing the spatial distribution of the gas concentration in a specific region. The performance of the proposed detector is comparable to that of the other state-of-the-art gas sensors.

Automated summary

A gas detector based on 2D SnSe2 layered film, with high sensitivity, wide dynamic range, and real-time response, is proposed in this study. The detector's performance is comparable to other state-of-the-art gas sensors.