Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

Atomically thin semiconductors such as transition metal dichalcogenides have recently enabled diverse devices in the emerging two-dimensional (2D) electronics. While scalable 2D electronics demand monolithic integrated circuits consisting of complementary p-type and n-type transistors, conventional p-type and n-type doping in desired regions, monolithically in the same semiconducting atomic layers, remains elusive or impractical. Here, we report on an agile, high-precision scanning laser annealing approach to realizing 2D monolithic complementary logic circuits on atomically thin MoTe2, by reliably designating p-type and n-type transport polarity in the constituent transistors via localized laser annealing and modification of their Schottky contacts. Pristine p-type field-effect transistors (FETs) transform into n-type ones upon controlled laser annealing on their source/drain gold electrodes, exhibiting a mobility of 96.5 cm(2) V-1 s(-1) (the highest known to date) and an On/Off ratio of 10(6). Elucidation and validation of such an on-demand configuration of polarity in MoTe2 FETs further enable the construction and demonstration of essential logic circuits, including both inverter and NOR gates. This dopant-free, spatially precise scanning laser annealing approach to configuring monolithic complementary logic integrated circuits may enable programmable functions in 2D semiconductors, exhibiting potential for additively manufactured, scalable 2D electronics.

Automated summary

The use of scanning laser annealing allows for the realization of 2D monolithic complementary logic circuits on atomically thin MoTe2, reliably designating p-type and n-type transport polarity through localized laser annealing and modification of Schottky contacts. This approach enables the construction of essential logic circuits such as inverters and NOR gates, with the potential for programmable functions in 2D semiconductors.