期刊
ACS NANO
卷 15, 期 10, 页码 16729-16737出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c06705
关键词
wide band gap semiconductors; ultraviolet photodetector; silicon nanowire array; leaky mode resonance; narrow band gap semiconductors
类别
资金
- National Natural Science Foundation of China (NSFC) [62074048]
- Fundamental Research Funds for the Central Universities [JZ2018HGXC0001]
- Funds for the Central Universities [JZ2018HGPB0275, PA2020GDKC0014]
- Open Foundation of Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices [4500-411104/011]
The study introduces a non-wide band gap semiconductor ultraviolet photodetector utilizing silicon nanowire arrays, which exhibit sensitivity to UV light but insensitivity to visible and infrared light. This novel device shows promise for sensitive UV photodetectors, with characteristics comparable to or even better than traditional wide band gap semiconductor devices.
Ultraviolet photodetectors (UVPDs) based on wide band gap semiconductors (WBSs) are important for various civil and military applications. However, the relatively harsh preparation conditions and the high cost are unfavorable for commercialization. In this work, we proposed a non-WBS UVPD by using a silicon nanowire (SiNW) array with a diameter of 45 nm as building blocks. Device analysis revealed that the small diameter SiNW array covered with monolayer graphene was sensitive to UV light but insensitive to both visible and infrared light illumination, with a typical rejection ratio of 25. Specifically, the responsivity, specific detectivity, and external quantum efficiency under 365 nm illumination were estimated to be 0.151 A/W, 1.37 x 10(12) Jones, and 62%, respectively, which are comparable to or even better than other WBS UVPDs. Such an abnormal photoelectrical characteristic is related to the HE1m leaky mode resonance (LMR), which is able to shift the peak absorption spectrum from near-infrared to UV regions. It is also revealed that this LMR is highly dependent on the diameter and the period of the SiNW array. These results show narrow band gap semiconductor nanostructures as promising building blocks for the assembly of sensitive UV photodetectors, which are very important for various optoelectronic devices and systems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据