Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions

Ultraviolet photodetectors (UVPDs) based on wide band gap semiconductors (WBSs) are important for various civil and military applications. However, the relatively harsh preparation conditions and the high cost are unfavorable for commercialization. In this work, we proposed a non-WBS UVPD by using a silicon nanowire (SiNW) array with a diameter of 45 nm as building blocks. Device analysis revealed that the small diameter SiNW array covered with monolayer graphene was sensitive to UV light but insensitive to both visible and infrared light illumination, with a typical rejection ratio of 25. Specifically, the responsivity, specific detectivity, and external quantum efficiency under 365 nm illumination were estimated to be 0.151 A/W, 1.37 x 10(12) Jones, and 62%, respectively, which are comparable to or even better than other WBS UVPDs. Such an abnormal photoelectrical characteristic is related to the HE1m leaky mode resonance (LMR), which is able to shift the peak absorption spectrum from near-infrared to UV regions. It is also revealed that this LMR is highly dependent on the diameter and the period of the SiNW array. These results show narrow band gap semiconductor nanostructures as promising building blocks for the assembly of sensitive UV photodetectors, which are very important for various optoelectronic devices and systems.

Automated summary

The study introduces a non-wide band gap semiconductor ultraviolet photodetector utilizing silicon nanowire arrays, which exhibit sensitivity to UV light but insensitivity to visible and infrared light. This novel device shows promise for sensitive UV photodetectors, with characteristics comparable to or even better than traditional wide band gap semiconductor devices.