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Woong Huh et al.
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Pai-Yu Chen et al.
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Can Li et al.
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Xiaoning Zhao et al.
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Yuhan Shi et al.
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Resistive random-access memory based on ratioed memristors
Miguel Angel Lastras-Montano et al.
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Electronic synapses made of layered two-dimensional materials
Yuanyuan Shi et al.
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Miao Wang et al.
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Gina C. Adam et al.
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Peida Zhao et al.
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He Tian et al.
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Qingmei Su et al.
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Huan Zhao et al.
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Christoph Baeumer et al.
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Kai Qian et al.
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Kyung Min Kim et al.
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M. Prezioso et al.
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Fabien Alibart et al.
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Metal-Oxide RRAM
H. -S. Philip Wong et al.
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Jun Yao et al.
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Shimeng Yu et al.
APPLIED PHYSICS LETTERS (2011)
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Julien Borghetti et al.
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Ch. Walczyk et al.
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D. S. Shang et al.
PHYSICAL REVIEW B (2006)
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V Beiu et al.
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