4.8 Article

Room Temperature Enhancement of Electronic Materials by Superacid Analogues

期刊

ACS NANO
卷 16, 期 1, 页码 1260-1270

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c09085

关键词

lifetime; photoluminescence; silicon; superacid; passivation; transition metal dichalcogenides

资金

  1. Engineering and Physical Sciences Research Council [EP/R513374/1]

向作者/读者索取更多资源

Treatment with superacid bis-(trifluoromethanesulfonyl) amide enhances the properties of optoelectronic materials, resulting in longer effective carrier lifetimes and higher photoluminescence quantum yields. A study on crystalline silicon and transition metal dichalcogenide monolayers and flakes shows that structurally similar chemicals give passivating films with different charge levels, and treatment with analogues to TFSA can enhance the photoluminescence of MoS2 and WS2.
Treatment with the superacid bis - (trifluoromethanesulfonyl) amide (sometimes known as TFSA, TFSI, or HNTf2) enhances the properties of a wide range of optoelectronic materials, resulting in longer effective carrier lifetimes and higher photoluminescence quantum yields. We have conducted a multimaterial study treating both crystalline silicon and transition metal dichalcogenide (TMDC) monolayers and few-layer flakes with solutions formed from TFSA and a range of compounds with related chemical structures with different Lewis acidities, in order to elucidate the factors underpinning the TFSA-related class of enhancement treatments. We adopt dichloromethane (DCM) as a common solvent as it provides good results at room temperature and is potentially less hazardous than TFSA-dichloroethane (DCE) heated to similar to 100 degrees C, which has been used previously. Kelvin probe experiments on silicon demonstrate that structurally similar chemicals give passivating films with substantially different charge levels, with the higher levels of charge associated with the presence of CF3SO2 groups resulting in longer effective lifetimes due to an enhancement in field-effect passivation. Treatment with all analogue solutions used results in enhanced photoluminescence in MoS2 and WS2 compared to untreated controls. Importantly we find that MoS2 and WS2 can be enhanced by analogues to TFSA that lack sulfonyl groups, meaning an alternative mechanism to that proposed in computational reports for TFSA enhancement must apply.

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