4.8 Article

Rationally Designed Topological Quantum Dots in Bottom-Up Graphene Nanoribbons

期刊

ACS NANO
卷 15, 期 12, 页码 20633-20642

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c09503

关键词

graphene nanoribbons; topological materials; heterojunctions; quantum dots; scanning tunneling microscopy; scanning tunneling spectroscopy; density functional theory

资金

  1. US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05CH11231, KC1203]
  2. Office of Naval Research [N00014-19-1-2503]
  3. National Science Foundation [DMR-1839098, DMR-1926004]
  4. Dutch Research Council (NWO) [019.182EN.18]
  5. Frontera computing project at the Texas Advanced Computing Center [OAC-1818253]
  6. Office of Naval Research under MURI Program [N00014-19-1-2596]

向作者/读者索取更多资源

The paper discusses the fabrication and characterization of deterministic GNR quantum dots with orbital character defined by zero-mode states from nontrivial topological interfaces. The results are supported by density-functional theory and tight-binding calculations, showing that the orbital hopping between topological zero-mode states can be tuned based on the bonding geometry of the interconnecting region. This study demonstrates the potential of topological zero modes in designer quantum dots and advanced electronic devices.
Bottom-up graphene nanoribbons (GNRs) have recently been shown to host nontrivial topological phases. Here, we report the fabrication and characterization of deterministic GNR quantum dots whose orbital character is defined by zero-mode states arising from nontrivial topological interfaces. Topological control was achieved through the synthesis and on-surface assembly of three distinct molecular precursors designed to exhibit structurally derived topological electronic states. Using a combination of low-temperature scanning tunneling microscopy and spectroscopy, we have characterized two GNR topological quantum dot arrangements synthesized under ultrahigh vacuum conditions. Our results are supported by density-functional theory and tight-binding calculations, revealing that the magnitude and sign of orbital hopping between topological zero-mode states can be tuned based on the bonding geometry of the interconnecting region. These results demonstrate the utility of topological zero modes as components for designer quantum dots and advanced electronic devices.

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