期刊
ACS NANO
卷 16, 期 1, 页码 597-603出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c07803
关键词
WS2; homosuperlattices; 1T and 2H phases; potential wells; photoluminescence
类别
资金
- National Key R&D Program of China [2016YFA0202200]
- NSFC [92064014, 11933006]
- Youth Innovation Promotion Association CAS
- SCTSM [18J1414900]
- State Key Laboratory on Advanced Displays and Optoelectronics at HKUST
- Center for 1D/2D Quantum Materials at HKUST
This study demonstrates the formation of a lateral homosuperlattice (MLHS) with alternating 1T and 2H domains in a 2D WS2 monolayer plane. The 2H domains, laterally localized and isolated by potential wells, exhibit junction interfaces and irradiated photoluminescence (PL) with a lateral periodic distribution in the two-dimensional plane. The research on MLHSs provides insight into lateral homojunctions and homosuperlattices in a monolayer plane, offering an alternative approach to modulate optical and electronic behaviors in TMD monolayers.
Homojunctions and homosuperlattices are essential structures and have been widely explored for use in advanced electronic and optoelectronic devices. However, artificially manipulating crystalline phases in two-dimensional (2D) monolayers is still challenging, especially when attempting to engineer lateral homogeneous junctions in a single monolayer of transition metal dichalcogenides (TMDs). Herein, we demonstrate a lateral homosuperlattice (MLHS) with alternating 1T and 2H domains in a 2D WS2 monolayer plane. In MLHSs, the 2H domains, which are laterally localized and isolated by potential wells, manifest junction interfaces and irradiated photoluminescence (PL) with a lateral periodic distribution in the two-dimensional plane. The studies on MLHSs here can provide further understanding of lateral homojunctions and homosuperlattices in a monolayer plane, providing an alternative route to modulate optical and electronic behaviors in TMD monolayers.
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