期刊
ACS NANO
卷 15, 期 12, 页码 20242-20252出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c08331
关键词
photoconductor; gain-bandwidth product; photogain; silicon nanowire; transient photoresponses; gain mechanism
类别
资金
- special-key project of Innovation Program of Shanghai Municipal Education Commission [2019-07-00-02-E00075]
- National Science Foundation of China (NSFC) [92065103]
- China National Postdoctoral Program for Innovative [BX20200205]
- Science and Technology Commission of Shanghai Municipality (STCSM) Nature Science Project General Program [21ZR1433800]
- Shanghai Sailing Program [19YF1424900]
This article investigates the transient photoresponses of nanowire photoconductors and concludes that despite having high gains, they will never outperform typical PIN photodiodes in terms of gain-bandwidth product.
Low-dimensional photodetectors, in particular those in photoconductive mode, often have extraordinarily high photogain. However, high gain always comes along with a slow frequency response. The gain-bandwidth product (GBP) is a figure of merit to evaluate the performance of a photodetector. Whether the high-gain photoconductors can outperform standard PIN photodiodes in terms of GBP remains an open question. In this article, we derived the analytical transient photoresponses of nanowire photoconductors which were validated with the simulations and experiments. Surprisingly, the fall transients do not follow a simple time-dependent exponential function except for some special cases. Given the analytical photogains that were established previously, we derived the theoretical GBP of high-gain nanowire photoconductors. Analysis of the analytical GBP indicates that nanoscale photoconductors, although having extremely high gain, will never outperform typical PIN photodiodes in terms of GBP.
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