4.8 Article

Layer-Dependent Nonlinear Optical Properties of WS2, MoS2, and Bi2S3 Films Synthesized by Chemical Vapor Deposition

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 1, 页码 2390-2400

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c21797

关键词

chemical vapor deposition; WS2; MoS2; Bi2S3; saturable absorption; reverse saturable absorption; layer-dependent band gap

资金

  1. National Natural Science Foundation of China [12074311, 11774288, 11974279, 62004162, 12004310]
  2. Natural Science Foundation of Shaanxi Province [2019JC-25]

向作者/读者索取更多资源

Two-dimensional layered materials exhibit layer-dependent optical properties in nonlinear optics due to complex nonlinear absorption processes, which are difficult to understand. Experimental results show that the nonlinear optical properties of chalcogenide compounds are related to both pump intensity and layer number, with saturable absorption occurring in thick samples and reverse saturable absorption occurring in thin samples. The transition between two-photon absorption and saturable absorption is found to be dependent on the layer thickness and band gaps in the materials.
Two-dimensional (2D) layered materials have shown layer-dependent optical properties in both linear optical and nonlinear optical (NLO) regimes due to prominent interlayer coupling and quantum confinement in an atomic scale. However, the NLO properties become more complicated as both saturable absorption (SA) and reverse saturable absorption (RSA) easily happen in 2D materials, which results in a significant challenge to understand the evolution of nonlinear absorption with layers. Motivated by this, chemical vapor-deposited chalcogenide compounds (WS2, MoS2, and Bi2S3) are used to investigate the pump intensity and layer number-dependent NLO properties. The values of nonlinear absorption coefficients of these chalcogenide compounds increase with the pump intensity by an 800 nm femtosecond laser, which can be described by an empirical power law function. The SA process due to the large transition probability of the ground state readily takes place in thick samples, while RSA occurs easily in thin samples due to the two-photon absorption (TPA). The transition from TPA to SA is deduced to occur at 13L-WS2, 1SL-MoS2, and SL-Bi2S3, which is related to the layer-dependent band gaps. Our results provide an efficient way to tune optical nonlinearities with a controlled layer number and to design corresponding NLO devices such as optical switches and saturable absorbers.

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