Integration of Si Heterojunction Solar Cells with III-V Solar Cells by the Pd Nanoparticle Array-Mediated Smart Stack Approach

This paper describes the way to fabricate two-terminal tandem solar cells using Si heterojunction (SHJ) bottom cells and GaAs-relevant III-V top cells by smart stack, an approach enabling the series connection of dissimilar solar cells through Pd nanoparticle (NP) arrays. It was suggested that placing the Pd NP arrays directly on typical SHJ cells results in poor tandem performance because of the insufficient electrical contacts and/or deteriorated passivation quality of the SHJ cells. Therefore, hydrogenated nanocrystalline Si (nc-Si:H) layers were introduced between Pd NPs and SHJ cells to improve the electrical contacts and preserve the passivation quality. Such nc-Si:H-capped SHJ cells were integrated with InGaP/AlGaAs double-junction cells, and a certified efficiency of 27.4% (under AM 1.5 G) was achieved. In addition, this paper addresses detailed analyses of the 27.4% cell. It was revealed that the cell had a relatively large gap at the smart stack interface, which limited the short-circuit current density (thereby the efficiency) of the cell. Therefore, higher efficiency would be expected by reducing the interfacial gap distance, which is governed by the height of the Pd NPs.

Automated summary

This paper describes a method for fabricating two-terminal tandem solar cells using Si heterojunction bottom cells and GaAs-relevant III-V top cells by smart stack. By introducing hydrogenated nanocrystalline Si layers, the electrical contacts and passivation quality of the cells were improved, resulting in a certified efficiency of 27.4%.