High Temperature CsPbBrxI3-x Memristors Based on Hybrid Electrical and Optical Resistive Switching Effects

The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBrxI3-x-based (X = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 degrees C maximum have been successfully achieved. At room temperature, the CsPbBrxI3-x-based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (similar to 0.81, similar to 0.64, and similar to 0.54 V for different devices, respectively), moderate ON/OFF ratio (similar to 10(2)), stable endurance (10(3) cycles), and long retention time (10(4) s). The CsPbBrxI3-x-based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI3, CsPbBrI2, and CsPbBr2I memristors occur at 90, 150, and 270 degrees C, respectively. Finally, nonvolatile imaging employing CsPbBr2I-based memristor arrays based on the electrical-write and optical-erase operation at 100 degrees C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.

Automated summary

This study successfully achieved mixed halide CsPbBrxI3-x-based memristors with excellent performance at different temperatures, demonstrating repeatability and stability in high-temperature environments. The results suggest that this novel type of memory devices has potential for application in perovskite wearable and large-scale information devices in high-temperature scenarios.