期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 47, 页码 56302-56308出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c16861
关键词
Ge gradient; solar cells; coselenization
资金
- Programs of the National Natural Science Foundation of China [61804045, U1804160]
- Henan Provincial Education Committee [19A480004]
Researchers demonstrated a CZTSe solar cell with a shallow Ge gradient, achieving an efficiency of over 10%. By using a GeSe2-Se coselenization process, they improved band tailing, junction quality, and carrier separation in the device, marking a significant breakthrough for Ge-graded CZTSe solar cells and offering a promising approach for developing Ge-involved solar cells.
Given the prominent success of the Ga gradient in CuIn1-xGaxSe2 (CIGSe) solar cells, Ge gradient implementation is a promising way to boost Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells. However, Ge-graded CZTSSe solar cells only possess a low efficiency of 9.2%, far from that of Ge-incorporated CZTSSe without a gradient (12.3%). Herein, we demonstrated a shallow Ge gradient CZTSe solar cell with an improved efficiency over 10%. The Ge gradient was achieved through a GeSe2-Se coselenization process, where GeSe2 acts as a low-temperature fluxing agent to assist crystallization and induce Ge transport toward the back interface. The relieved band tails and improved junction quality, leading to a better carrier separation, were found to take a primary responsibility for device improvement. These results highlight a remarkable breakthrough for Ge-graded CZTSe solar cells and offer a promising way to develop Ge-involved solar cells.
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