Recent Developments on MnN for Spintronic Applications

There is significant interest worldwide to identify new antiferromagnetic materials suitable for device applications. Key requirements for such materials are: relatively high magnetocrystalline anisotropy constant, low cost, high corrosion resistance and the ability to induce a large exchange bias, i.e., loop shift, when grown adjacent to a ferromagnetic layer. In this article, a review of recent developments on the novel antiferromagnetic material MnN is presented. This material shows potential as a replacement for the commonly used antiferromagnet of choice, i.e., IrMn. Although the results so far look promising, further work is required for the optimization of this material.

Automated summary

There is significant interest worldwide in identifying new antiferromagnetic materials suitable for device applications, with key requirements including high magnetocrystalline anisotropy constant, low cost, high corrosion resistance, and the ability to induce a large exchange bias. The novel antiferromagnetic material MnN shows potential as a replacement for the commonly used antiferromagnet IrMn, but further optimization is needed.