Exciton dynamics in monolayer graphene grown on a Cu(111) surface

We have characterized the carrier dynamics of the excitonic emission emerging from a monolayer of graphene grown on a Cu(111) surface. Excitonic emission from the graphene, with strong and sharp peaks both with a full-width at half-maximum of 2.7 meV, was observed near similar to 3.16 and similar to 3.18 eV at 4.2 K. The carrier recombination parameters were studied by measuring both temperature-dependent and time-resolved photoluminescence. The intensity variation with temperature of these two peaks shows an opposing trend. The time-resolved emission was modelled using coupled differential equations and the decay time was found to be dominated by carrier trapping and Auger recombination as the temperature increased.

Automated summary

The carrier dynamics of excitonic emission from a monolayer of graphene grown on a Cu(111) surface was studied. The graphene exhibited strong and sharp excitonic emission peaks at approximately 3.16 and 3.18 eV with a full-width at half-maximum of 2.7 meV at 4.2 K. Carrier recombination parameters were determined through temperature-dependent and time-resolved photoluminescence, with carrier trapping and Auger recombination dominating the decay time as temperature increased.