4.8 Article

Bandgap engineering of two-dimensional C3N bilayers

期刊

NATURE ELECTRONICS
卷 4, 期 7, 页码 486-494

出版社

NATURE PORTFOLIO
DOI: 10.1038/s41928-021-00602-z

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资金

  1. National Natural Science Foundation of China [21673075, 51725204, 21771132, 51972216, 52041202, 11774368, 11804353, 11704204, 61971035, 61901038, 61725107]
  2. National Key Research and Development Program of China [2019YFA0308000, 2020YFA0308800, 2020YFA0406104]
  3. Innovative Research Group Project of the National Natural Science Foundation of China [51821002]
  4. Australian Research Council [DE170101403]
  5. Natural Science Foundation of Jiangsu Province [BK20190041]
  6. Key-Area Research and Development Program of GuangDong Province [2019B010933001]
  7. Collaborative Innovation Center of Suzhou Nano Science Technology
  8. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
  9. 111 Project
  10. Office of Naval Research [N00014-18-1-2182]
  11. Army Research Office [W911NF-16-1-0255]
  12. China Scholarship Council
  13. Australian Government
  14. Queensland Cyber Infrastructure Foundation
  15. University of Queensland Research Computing Centre
  16. Australian Research Council [DE170101403] Funding Source: Australian Research Council

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Carbon materials like graphene have potential applications in electronic device development due to their properties, but technical challenges remain. This study shows that the bandgaps of bilayers of two-dimensional C3N can be engineered by controlling the stacking order or applying an electric field, leading to improved performance.
Carbon materials such as graphene are of potential use in the development of electronic devices because of properties such as high mechanical strength and electrical and thermal conductivity. However, technical challenges, including difficulties in generating and modulating bandgaps, have limited the application of such materials. Here we show that the bandgaps of bilayers of two-dimensional C3N can be engineered by controlling the stacking order or applying an electric field. AA' stacked C3N bilayers are found to have a smaller bandgap (0.30 eV) than AB' stacked bilayers (0.89 eV), and both bandgaps are lower than that of monolayer C3N (1.23 eV). The larger bandgap reduction observed in AA' stacked bilayers, compared with AB' stacked bilayers, is attributed to the greater p(z)-orbital overlap. By applying an electric field of similar to 1.4 V nm(-1), a bandgap modulation of around 0.6 eV can be achieved in the AB' structure. We also show that the C3N bilayers can offer controllable on/off ratios, high carrier mobilities and photoelectric detection capabilities.

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